Datasheet > SLD150N03T

SLD150N03T

更新时间： 2024-07-16 10:39:40

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	821K
描述
TO-252

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中文翻译

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数据手册

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SLD150N03T 数据手册

LEAD FREE

RoHS

SLD150N03T

30V N -Channel MOSFET

Features

General Description

- N-Channel:30V 150A

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

R_DS(on)Typ= 2.5mΩ@V_GS= 10V

R_DS(on)Typ= 4.5mΩ@V_GS= 4.5V

- Very Low On-resistance RDS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

 Load Switch

 Power Management

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD150N03T

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

150

I_D

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

600

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

225

108

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

1.4

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Maple semiconductor co., Ltd

http://www.maplesemi.com

Rev1.0 Jun. 2020

12 3 4 5 6

中文翻译

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