Datasheet > SLD1132VS

SLD1132VS

更新时间： 2024-09-20 22:50:19

品牌	Logo	应用领域
索尼 - SONY		二极管激光二极管
页数	文件大小	规格书
6页	89K
描述
635nm Red Laser Diode

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中文翻译

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技术参数
数据手册

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SLD1132VS 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	M-274, 3 PIN	Reach Compliance Code：	unknown
风险等级：	5.92	配置：	SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流：	0.08 A	最大正向电压：	3 V
JESD-609代码：	e0	安装特点：	THROUGH HOLE MOUNT
功能数量：	1	最高工作温度：	40 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	5 mW	峰值波长：	635 nm
形状：	ROUND	尺寸：	1 mm
子类别：	Laser Diodes	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	最大阈值电流：	70 mA
Base Number Matches：	1

SLD1132VS 数据手册

SLD1132VS

635nm Red Laser Diode

Description

M-274

The SLD1132VS is a red laser diode designed for

laser pointers. Its wavelength (635nm typ.) is

shortened by 35nm and visibility is increased by

approximately 7 times, compared to the conven-

tional visible laser diode (670nm typ.).

Features

• Short wavelength (635nm typ.)

• Small package (φ5.6)

• Fundamental traverse/single longitudinal mode

Applications

Laser pointers

Structure

• AlGaInP quantum well structure laser diode

• PIN photo diode for optical power output monitor

Recommended Optical Power Output

3mW

Absolute Maximum Ratings

• Optical power output

• Reverse voltage

• Operating temperature Topr

–10 to +40 °C

–40 to +85 °C

• Storage temperature

Tstg

Connection Diagram

Pin Configuration

COMMON

1. LD cathode

2. PD anode

3. COMMON

Bottom View

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E94Y01C98-PS

12 3 4 5 6

中文翻译

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