Datasheet > SLA5227

SLA5227

更新时间： 2024-09-13 12:20:07

品牌	Logo	应用领域
三垦 - SANKEN		二极管开关功率因数校正双极性晶体管
页数	文件大小	规格书
8页	167K
描述
Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area

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数据手册

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SLA5227 数据手册

http://www.sanken-ele.co.jp

Oct.2010

SANKEN ELECTRIC

ＳＬＡ５２２７

Features

Package

ＳＬＡ

・Built-in IGBT and diode bridge of partial switching PFC

circuit Enable to reduce mounting area

・Low saturation voltage IGBT VCE(sat) = 1.7V max

・Low saturation voltage diode bridge VF = 1.1V max

・The clip lead is adopted for inner lead.

Low inductance, low resistance, high current capability

The smoke generation and explosion are less likely

to occur in case of destruction.

Equivalent circuit

3 (cut)

Applications

・Partial switching PFC

Absolute maximum ratings

(Ta=25℃)

Unit

Characteristic

Symbol

VCES

VGE

Ratings

600

±30

Collector to Emitter Voltage

Gate to Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Diode Peak Reverse Voltage

Diode Forward Current

IC(DC)

IC (pulse) ^※

100

600

VRM

IFSM ^※

200

Diode Peak Surge Forward Current

Diode I²t Limiting Value

I²t ^※

A²s

(No.Fin Ta=25°C)

(Tc=25°C)

PT^※

Ｗ

Maximum Allowable Power Dissipation

θj-a^※

25 (Junction-to-Ambient)

1.36 ( Junction-to-Case )

°C /W

θj-c^※

Thermal Resistance

Isolation Voltage

3.91

θj-c IGBT

°C /W

( Junction-to-Case,IGBT 1 Element Operation )

8.33

θj-c Di

°C /W

Vrms

( Junction-to-Case,Di 1 Element Operation )

1500

VISO

( Between Fin and Lead Pin, 1minute AC)

Operating Junction Temperature

Storage Temperature

150

°C

Tstg

-40～150

※1. PW≦10μs, Duty≦1%

※3. 1ms≦PW≦10ms

※2. PW≦10ms, Half sinewave, 1shot

※4. All Element Operation

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no

responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.

Copy Right: SANKEN ELECTRIC CO.,LTD.

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