Datasheet > SL55C

SL55C

更新时间： 2024-12-01 01:25:51

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
3页	920K
描述
LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES

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中文翻译

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SL55C 数据手册

SL52C THRU SL510C

Reverse Voltage - 20 to 100 Volts Forward Current - 5.0 Ampere

LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES

Features

DO-214AB/SMC

The plastic package carries Underwriters Laboratory



Flammability Classification 94V-0

0.245(6.22)

0.220(5.59)

0.126 (3.20)

0.114 (2.90)



For surface mounted applications

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

0.280(7.11)

0.260(6.60)

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

260°C/10 seconds at terminals

0.012(0.305)

0.006(0.152)



0.103(2.62)

0.079(2.06)

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

0.320(8.13)

0.305(7.75)

Mechanical Data

Case : JEDEC DO-214AB/SMC Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.002ounce, 0.055 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

SL52C SL53C SL54C SL55C SL56C SL58C SL510C

SYMBOLS

UNITS

MDD

Marking Code

SL52C SL53C SL54C SL55C SL56C SL58C SL510C

100

RMM

RMS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

(AV)

5.0

at TL=90

℃

Peak forward surge current

120

FSM

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

Maximum instantaneous forward voltage at 5.0A

0.45

0.50

0.70

0.5

20.0

0.2

10.0

Maximum DCreverse current

at rated DCblocking voltage

=25

℃

μA

TA=125℃

200

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

55.0

℃/



STG

-55 to +150

℃

Operating junction and storage temperaturerange TJ,T

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.

3.The typical data above is for reference only.

DN:T19718A0

https://www.microdiode.com

Rev:2019A0

Page :1

12 3

中文翻译

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