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SL35B PDF预览

SL35B

更新时间： 2024-01-31 03:55:48
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
3页 988K
描述
LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES

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中文翻译

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SL35B 数据手册

 浏览型号SL35B的Datasheet PDF文件第2页浏览型号SL35B的Datasheet PDF文件第3页 
SL32B THRU SL310B  
Reverse Voltage - 20 to 100 Volts Forward Current - 3.0 Ampere  
LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES  
Features  
DO-214AA/SMB  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
0.155(3.94)  
0.130(3.30)  
0.086 (2.20)  
0.071 (1.80)  
For surface mounted applications  
Metal silicon junction,majority carrier conduction  
Low power loss,high efficiency  
0.185(4.70)  
0.160(4.06)  
Built-in strain relief,ideal for automated placement  
High forward surge current capability  
High temperature soldering guaranteed:  
260°C/10 seconds at terminals  
0.012(0.305)  
0.006(0.152)  
0.096(2.44)  
0.084(2.13)  
0.060(1.52)  
0.030(0.76)  
0.008(0.203)MAX.  
0.220(5.59)  
0.200(5.08)  
Mechanical Data  
Case : JEDEC DO-214AA/SMB Molded plastic body  
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight  
: 0.003ounce, 0.093 grams  
Maximum Ratings And Electrical Characteristics  
Ratings at 25°C ambient temperature unlss otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SL32B SL33B SL34B SL35B SL36B SL38B SL310B  
Parameter  
SYMBOLS  
UNITS  
MDD  
MDD  
MDD  
MDD  
MDD  
MDD  
MDD  
Marking Code  
SL32B SL33B SL34B SL35B SL36B SL38B SL310B  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
V
RMM  
RMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
100  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
A
3.0  
70  
at TL=90  
℃
Peak forward surge current  
I
FSM  
A
V
8.3ms single half sine-wave  
superimposed onrated load (JEDEC Method)  
Maximum instantaneous forward voltage at 3.0A  
V
F
0.45  
500  
0.50  
0.70  
0.5  
20.0  
0.2  
10.0  
Maximum DCreverse current  
at rated DCblocking voltage  
T
A
=25  
℃
mA  
I
R
TA=125℃  
pF  
300  
Typical junction capacitance (NOTE 2)  
Typical thermal resistance (NOTE 3)  
CJ  
68.0  
℃/  
W
R
JA  
-55 to +150  
℃
Operating junction and storage temperaturerange TJ,TSTG  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.  
3.The typical data above is for reference only.  
DN:T19717A0  
https://www.microdiode.com  
Rev:2019A0  
Page :1  
123

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