Datasheet > SL310B

SL310B

更新时间： 2024-09-14 01:25:51

品牌	Logo	应用领域
辰达行 - MDD		功效瞄准线光电二极管
页数	文件大小	规格书
3页	988K
描述
LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES

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中文翻译

获取价格

数据手册

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SL310B 数据手册

SL32B THRU SL310B

Reverse Voltage - 20 to 100 Volts Forward Current - 3.0 Ampere

LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODES

Features

DO-214AA/SMB



The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

0.155(3.94)

0.130(3.30)

0.086 (2.20)

0.071 (1.80)



For surface mounted applications

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

0.185(4.70)

0.160(4.06)

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

260°C/10 seconds at terminals

0.012(0.305)

0.006(0.152)



0.096(2.44)

0.084(2.13)

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

0.220(5.59)

0.200(5.08)

Mechanical Data

Case : JEDEC DO-214AA/SMB Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.003ounce, 0.093 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25°C ambient temperature unlss otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SL32B SL33B SL34B SL35B SL36B SL38B SL310B

Parameter

SYMBOLS

UNITS

MDD

Marking Code

SL32B SL33B SL34B SL35B SL36B SL38B SL310B

100

RMM

RMS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

(AV)

3.0

at TL=90

℃

Peak forward surge current

FSM

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0A

0.45

500

0.50

0.70

0.5

20.0

0.2

10.0

Maximum DCreverse current

at rated DCblocking voltage

=25

℃

TA=125℃

300

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

68.0

℃/



-55 to +150

℃

Operating junction and storage temperaturerange TJ,TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas.

3.The typical data above is for reference only.

DN:T19717A0

https://www.microdiode.com

Rev:2019A0

Page :1

12 3

中文翻译

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