Datasheet > SKW30N60_08

SKW30N60_08

更新时间： 2022-12-18 10:16:57

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
13页	320K
描述
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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SKW30N60_08 数据手册

SKW30N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-247-3

• Very soft, fast recovery anti-parallel EmCon diode

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹for target applications

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Marking

Package

SKW30N60

600V

30A

2.5V

K30N60 PG-TO-247-3

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_Cpuls

112

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

T_C= 25°C

T_C= 100°C

I_F

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Short circuit withstand time²

I_Fpuls

V_GE

t_SC

112

±20

µs

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

T_C= 25°C

Soldering temperature

wavesoldering, 1.6 mm (0.063 in.) from case for 10s

Operating junction and storage temperature

P_tot

250

260

T_s

°C

T_j, T_stg

-55...+150

¹J-STD-020 and JESD-022

²Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2_2 Sep 08

12 3 4 5 6 7...13

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