Datasheet > SKT 13,5 Qu ZG bond

SKT 13,5 Qu ZG bond

更新时间： 2024-11-03 14:57:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	82K
描述
Chips

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SKT 13,5 Qu ZG bond 数据手册

SKT 13,5 Qu ZG bond.

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.45 mA

V_RRM

V_DRM

I_T(AV)

I_TSM

i²t

1600

145

T_j= 25 °C, I_D= 0.45 mA

T_c= 80 °C, T_j= 130 °C

T_j= 130 °C, 10 ms, sin 180°

2300

26450

130

A²s

T_jmax

°C

THYRISTOR

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_T(DC)= 185 A

T_j= 130 °C, I_T= 200 A

V_T

1.2

0.85

1.8

V_RRM= 1600 V

T_j= 130 °C

T_j= 25 °C

T_j= 115 °C

T_j= 130 °C

T_j= 25 °C

V_T(TO)

r_T

Size: 13,5mm x 13,5 mm

mΩ

I_GT

V_GT

I_GD

V_GD

I_H

100

1.98

Central gate

SKT 13,5 Qu ZG bond.

0.25

220

550

Features

I_L

ꢀ high current density due to double

mesa technology

ꢀ high surge current

Dynamic Characteristics

Symbol Conditions

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

min.

typ.

max.

Unit

T_j= 130 °C

t_q

135

µs

Typical Applications*

(di/dt)_cr

(dv/dt)_cr

200

A/µs

V/µs

ꢀ conrolled rectifier circuits

ꢀ solid state relays

1000

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

130

255

°C

T_stg

T_solder

°C

R_th(j-c)

Semipack 1 assembly

0.23

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

13.5 x 13.5

182

mm²

Area total

Anode

solderable (Ag/Ni)

Gate and

Cathode

bondable (Al)

Wire bond

Package

Al,diameter ≤ 500µm

tray

Chips /

Package

pcs

SKT

Rev. 0 – 19.02.2010

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