Datasheet > SKR 10,3 Qu bond

SKR 10,3 Qu bond

更新时间： 2024-09-21 14:54:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	76K
描述
Chips

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SKR 10,3 Qu bond 数据手册

SKR 10,3 Qu bond

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.1 mA

T_s= 80 °C, T_j= 150 °C

T_j= 150 °C, 10 ms, sin 180°

V_RRM

I_F(AV)

i²t

1600

135

A²s

13600

2000

1650

150

T_j= 25 °C

10 ms

I_FSM

sin 180°

T_j= 150 °C

T_jmax

°C

DIODE

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_F(DC)= 170 A

T_j= 25 °C, V_RRM

T_j= 145 °C, V_RRM

I_R

0.1

1.1

V_RRM= 1600 V

Size: 10,3 mm x 10,3 mm

T_j= 25 °C, I_F= 106 A

T_j= 125 °C, I_F= 106 A

T_j= 125 °C

V_F

1.21

1.1

0.9

V_(TO)

r_T

0.83

1.6

T_j= 125 °C

mΩ

µs

SKR 10,3 Qu bond

Features

T_j= 25 °C, ± 1 A

t_rr

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

ꢀ high current density due to mesa

technology

ꢀ high surge current

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

T_j

-40

150

250

320

°C

T_stg

T_solder

10 min.

5 min.

Typical Applications*

soldered on 0,38 mm DCB, reference

point on copper heatsink close to the

chip

R_th(j-s)

0.38

K/W

ꢀ uncontrolled rectifier bridges

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

10.3 x 10.3

mm²

Area total

Anode

106.09

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

wafer frame

Chips /

Package

128

pcs

SKR

Rev. 1 – 19.02.2010

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