Datasheet > SKR049XP16B1F

SKR049XP16B1F

更新时间： 2024-09-21 14:54:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	231K
描述
Chips

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SKR049XP16B1F 数据手册

SKR049XP16B1F

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.05 mA

T_c= 85 °C, T_j= 175 °C, sin 180°,

V_RRM

I_F(AV)

I_FSM

1600

102

_th(j-c)= 0.49 K/W

T_j= 25 °C

T_j= 150 °C

1000

890

10 ms

sin 180°

T_j= 150 °C, 10 ms, sin 180°

i²t

T_jmax

3960

175

A²s

°C

DIODE

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_F(DC)= 132 A

V_RRM= 1600 V

T_j= 25 °C, V_RRM

I_R

0.08

1.7

1.20

1.07

1.05

Size: 7.0 x 7.0 mm²

T_j= 150 °C, V_RRM

T_j= 25 °C, I_F= 44 A

T_j= 150 °C, I_F= 44 A

T_j= 175 °C, I_F= 44 A

T_j= 25 °C, 44 A, 100 V, 9.5 A/µs

T_j= 150 °C, 44 A, 100 V, 9.5 A/µs

T_j= 25 °C, 44 A, 100 V, 9.5 A/µs

T_j= 150 °C, 44 A, 100 V, 9.5 A/µs

V_F

0.97

0.84

0.82

6.4

140

180

SKR049XP16B1F

Features*

t_rr

Q_rr

µs

µC

• New Power Enhancing Passivation

technology

• T_jmax= 175°C

• High current density

• Enhanced environmental robustness

For power loss calculation only

Symbol Conditions

Typical Applications

• uncontrolled rectifier bridges

min.

typ.

max.

Unit

T_j= 150 °C

V_(TO)

r_T

0.73

0.69

2.59

2.86

0.92

0.88

3.50

3.86

mΩ

Approximation for:

I_F1= 44 A

Footnotes

T_j= 175 °C

T_j= 150 °C

T_j= 175 °C

¹⁾Current rating is dependent on thermal

characteristics (R_th) of module assembly.

Refer to Fig. 1 for further information

I_F2= 132 A

r_T

Thermal Characteristics

Symbol Conditions

typ.

max.

Unit

T_j

T_stg

T_solder

-40

175

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Parameter

Values

Unit

Raster

size

Area total

Anode

7.0 x 7.0

mm²

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer on frame

Chips /

1 tray pack (6 trays)

Package

294

pcs

SKR

Rev. 1.0 – 01.10.2019

12 3

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