Datasheet > SKR012XP16B1F

SKR012XP16B1F

更新时间： 2024-11-09 14:55:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	213K
描述
Chips

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SKR012XP16B1F 数据手册

SKR012XP16B1F

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.05 mA

T_c= 85 °C, T_j= 175 °C, sin 180°,

V_RRM

I_F(AV)

I_FSM

1600

_th(j-c)= 1.53 K/W

T_j= 25 °C

T_j= 150 °C

220

200

175

A²s

°C

10 ms

sin 180°

T_j= 150 °C, 10 ms, sin 180°

i²t

T_jmax

DIODE

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_F(DC)= 35 A

V_RRM= 1600 V

T_j= 25 °C, V_RRM

I_R

0.05

1.7

1.20

1.07

1.05

Size: 3.5 x 3.5 mm²

T_j= 150 °C, V_RRM

T_j= 25 °C, I_F= 8 A

T_j= 150 °C, I_F= 8 A

T_j= 175 °C, I_F= 8 A

T_j= 25 °C, 8 A, 100 V, 1.7 A/µs

T_j= 150 °C, 8 A, 100 V, 1.7 A/µs

T_j= 25 °C, 8 A, 100 V, 1.7 A/µs

T_j= 150 °C, 8 A, 100 V, 1.7 A/µs

V_F

0.97

0.84

0.82

6.2

SKR012XP16B1F

Features

t_rr

Q_rr

µs

µC

• New Power Enhancing Passivation

technology

• T_jmax= 175°C

• High current density

• Enhanced environmental robustness

For power loss calculation only

Symbol Conditions

Typical Applications*

• uncontrolled rectifier bridges

min.

typ.

max.

Unit

T_j= 150 °C

V_(TO)

r_T

0.73

0.69

14.25

15.75

0.92

0.88

Approximation for:

Footnotes

T_j= 175 °C

T_j= 150 °C

T_j= 175 °C

_F1= 8 A

¹⁾Current rating is dependent on thermal

characteristics (R_th) of module assembly.

Refer to Fig. 1 for further information

19.25

21.25

mΩ

_F2= 24 A

r_T

Thermal Characteristics

Symbol Conditions

typ.

max.

Unit

T_j

T_stg

T_solder

-40

175

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Parameter

Values

Unit

Raster

size

Area total

Anode

3.5 x 3.5

mm²

12.25

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer on frame

Chips /

Package

1229

pcs

SKR

Rev. 2.0 – 22.05.2017

12 3

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