Datasheet > SKM900GA12E4

SKM900GA12E4

更新时间： 2024-11-10 14:55:39

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	178K
描述
IGBT Modules SEMITRANS 4 (106x62x37)

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中文翻译

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数据手册

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SKM900GA12E4 数据手册

SKM900GA12E4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

1305

1003

900

2700

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

-20 ... 20

SEMITRANS^®4

IGBT4 Modules

SKM900GA12E4

Features

V_CC= 800 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 1200 V

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

871

651

800

2400

3520

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

ꢀ IGBT4 = 4. generation medium fast

trench IGBT (Infineon)

-40 ... 175

°C

Module

I_t(RMS)

T_stg

ꢀ CAL4 = Soft switching 4. generation

CAL-diode

T_terminal= 80 °C

500

-40 ... 125

4000

°C

ꢀ Isolated copper baseplate using DBC

technology (Direct Bonded Copper)

ꢀ Increased power cycling capability

ꢀ With integrated gate resistor

ꢀ For higher switching frequenzies up to

12kHz

V_isol

AC sinus 50 Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

ꢀ UL recognized, file no. E63532

Typical Applications*

I_C= 900 A

T_j= 25 °C

V_CE(sat)

1.83

2.23

2.08

2.44

ꢀ AC inverter drives

ꢀ UPS

_GE= 15 V

T_j= 150 °C

chiplevel

ꢀ Switched reluctance motor

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

1.14

1.70

5.8

0.9

0.8

1.31

1.82

6.5

mΩ

Ω

chiplevel

Remarks

ꢀ Case temperature limited

to T_c= 125°C max.

ꢀ Recommended T_op= -40 ... +150°C

ꢀ Product reliability results valid

for T_j= 150°C

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 32.8 mA

T_j= 25 °C

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

54.4

3.52

3.00

5000

0.9

220

112

130

652

139

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 900 A

_GE= +15/-15 V

_{G on}= 1 Ω

_{G off}= 1 Ω

di/dt_on= 6900 A/µs

di/dt_off= 5600 A/µs

T_j= 150 °C

E_off

121

R_th(j-c)

per IGBT

0.035

K/W

Rev. 3 – 09.07.2014

12 3 4 5

中文翻译

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