Datasheet > SKM400GB12T4_0906

SKM400GB12T4_0906

更新时间： 2024-01-31 10:30:41

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	326K
描述
Fast IGBT4 Modules

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SKM400GB12T4_0906 数据手册

浏览型号SKM400GB12T4_0906的Datasheet PDF文件第2页

浏览型号SKM400GB12T4_0906的Datasheet PDF文件第3页

SKM400GB12T4

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

618

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

475

I_Cnom

400

I_CRM

I_CRM= 3xI_Cnom

1200

-20 ... 20

V_GES

SEMITRANS^®3

V_CC= 800 V

V_GE≤ 15 V

V_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Fast IGBT4 Modules

SKM400GB12T4

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

440

329

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

400

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

1200

Features

• V_CE(sat)with positive temperature

coefficient

1980

-40 ... 175

°C

• High short circuit capability, self

limiting to 6 x Icnom

Module

I_t(RMS)

T_stg

500

-40 ... 125

4000

°C

• Fast & soft inverse CAL diodes

• Large clearance (10 mm) and

creepage distances (20 mm)

• Isolated copper baseplate using DBC

Technology (Direct Copper Bonding)

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications

• AC inverter drives

• UPS

I_C= 400 A

V_CE(sat)

T_j= 25 °C

1.8

2.2

2.05

2.4

_GE= 15 V

T_j= 150 °C

chiplevel

• Electronic welders at fsw up to 20 kHz

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

2.5

3.8

5.8

0.1

0.9

0.8

2.9

4.0

6.5

0.3

Remarks

• Case temperature limited to

T_c= 125°C max, recomm.

mΩ

V_GE= 15 V

_op= -40 ... +150°C, product

V_GE(th)

I_CES

V_GE=V_CE, I_C= 15.2 mA

T_j= 25 °C

rel. results valid for T_j= 150°

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

24.6

1.62

1.38

2260

1.9

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

T_j= 150 °C

220

V_CC= 600 V

I_C= 400 A

_GE= ±15 V

E_on

t_d(off)

t_f

_{G on}= 1 Ω

_{G off}= 1 Ω

505

di/dt_on= 9700 A/µs

di/dt_off= 4300 A/µs

E_off

R_th(j-c)

K/W

per IGBT

0.072

Rev. 2 – 16.06.2009

12 3 4 5

中文翻译

下载PDF

与SKM400GB12T4_0906相关器件

型号	品牌	获取价格	描述	数据表
SKM400GB12V	SEMIKRON	获取价格	SEMITRANS
SKM400GB176D	SEMIKRON	获取价格	Trench IGBT Modules
SKM400GB176D_09	SEMIKRON	获取价格	Trench IGBT Modules
SKM400GB176D_10	SEMIKRON	获取价格	Trench IGBT Modules
SKM400GB17E4	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor,
SKM400GM12T4	SEMIKRON	获取价格	Fast IGBT4 Modules
SKM400GM17E4	SEMIKRON	获取价格	IGBT Modules SEMITRANS 3 (106x62x31)
SKM400GXXX	SEMIKRON	获取价格	SEMITRANS IGBT Modules New Range
SKM40GAR121D	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
SKM40GB121D	SEMIKRON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel,