Datasheet > SKM400GB12E4_10

SKM400GB12E4_10

更新时间： 2024-01-20 22:32:15

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	476K
描述
IGBT4 Modules

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数据手册

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SKM400GB12E4_10 数据手册

SKM400GB12E4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

616

474

400

1200

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

V_CC= 800 V

SEMITRANS^®3

IGBT4 Modules

SKM400GB12E4

Features

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

440

329

400

1200

1980

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• IGBT4 = 4. Generation (Trench)IGBT

• V_CEsatwith positive temperature

coefficient

-40 ... 175

°C

Module

I_t(RMS)

T_stg

• High short circuit capability, self limiting

to 6 x I_CNOM

80 °C

500

-40 ... 125

4000

°C

• Soft switching 4. Generation CAL diode

(CAL4)

V_isol

AC sinus 50Hz, t = 1 min

• UL recognized, file no. E63532

Characteristics

Symbol Conditions

IGBT

Typical Applications*

min.

typ.

max.

Unit

• AC inverter drives

• UPS

• Electronic welders at f_swup to 20 kHz

I_C= 400 A

T_j= 25 °C

V_CE(sat)

1.80

2.20

2.05

2.40

_GE= 15 V

T_j= 150 °C

Remarks

chiplevel

• Case temperature limited to

T_c= 125°C max, recomm.

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

2.50

3.75

5.8

0.9

0.8

2.88

4.00

6.5

m



_op= -40 ... +150°C, product

rel. results valid for T_j= 150°

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 15.2 mA

T_j= 25 °C

0.1

0.3

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

24.6

1.62

1.38

2260

1.9

242

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 400 A

_GE= ±15 V

_{G on}= 1 

_{G off}= 1 

580

101

di/dt_on= 9700 A/µs

di/dt_off= 4300 A/µs

T_j= 150 °C

E_off

R_th(j-c)

per IGBT

0.072

K/W

Rev. 3 – 29.10.2010

12 3 4 5

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