Datasheet > SKM400GARL066T

SKM400GARL066T

更新时间： 2024-10-02 14:55:35

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	138K
描述
IGBT Modules SEMITRANS 5 (106x62x31)

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中文翻译

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数据手册

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SKM400GARL066T 数据手册

SKM400GARL066T

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

600

504

379

400

800

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2xI_Cnom

-20 ... 20

SEMITRANS^®5

Trench IGBT Modules

SKM400GARL066T

Features

V_CC= 360 V

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

V_CES≤ 600 V

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

100

345

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

ꢀ Homogeneous Si

-40 ... 175

°C

ꢀ Trench = trenchgate technology

ꢀ V_CE(sat)with positive temperature

coefficient

ꢀ Integrated NTC temperature sensor

ꢀ UL recognized, file no. E63532

Freewheeling diode

T_c= 25 °C

T_c= 80 °C

I_F

421

301

400

T_j= 175 °C

I_Fnom

Typical Applications*

ꢀ UPS

ꢀ Inverter

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

800

t_p= 10 ms, sin 180°, T_j= 25 °C

AC sinus 50 Hz, t = 1 min

2880

-40 ... 175

°C

Remarks

Module

I_t(RMS)

T_stg

ꢀ Case temperature limited to Tc=125°C

max

°C

-40 ... 125

4000

ꢀ Reccomended Top=-40..+150°C

V_isol

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 400 A

T_j= 25 °C

V_CE(sat)

1.45

1.70

1.85

2.10

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.9

0.85

1.38

2.13

5.8

0.9

2.13

3.00

6.5

mΩ

Ω

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 6.4 mA

T_j= 25 °C

0.21

V_GE= 0 V

_CE= 600 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

24.7

1.54

0.73

3800

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GARL-T

Rev. 1 – 12.02.2015

12 3 4 5

中文翻译

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