Datasheet > SKM400GAR12V

SKM400GAR12V

更新时间： 2024-10-02 14:55:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	196K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

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数据手册

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SKM400GAR12V 数据手册

SKM400GAR12V

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

612

467

400

1200

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

SEMITRANS^®3

V_CC= 720 V

V_GE≤ 15 V

V_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

440

329

400

1200

1980

T_j= 175 °C

SKM400GAR12V

Features

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

ꢀ V-IGBT = 6. Generation Trench V-IGBT

(Fuji)

-40 ... 175

°C

Freewheeling diode

I_F

ꢀ CAL4 = Soft switching 4. Generation

CAL-diode

T_c= 25 °C

T_c= 80 °C

440

329

400

1200

1980

T_j= 175 °C

ꢀ Isolated copper baseplate using DBC

technology (Direct Copper Bonding)

ꢀ UL recognized, file no. E63532

ꢀ Increased power cycling capability

ꢀ With integrated gate resistor

ꢀ Low switching losses at high di/dt

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

-40 ... 175

°C

Typical Applications*

Module

I_t(RMS)

T_stg

ꢀ Electronic welders

ꢀ DC/DC – converter

ꢀ Brake chopper

T_terminal= 80 °C

500

-40 ... 125

4000

°C

V_isol

AC sinus 50 Hz, t = 1 min

ꢀ Switched reluctance motor

Remarks

Characteristics

ꢀ Case temperature limited to

T_c= 125°C max, recomm.

Symbol Conditions

IGBT

min.

typ.

max.

Unit

T_op= -40 ... +150°C, product

I_C= 400 A

rel. results valid for T_j= 150°

T_j= 25 °C

V_CE(sat)

1.75

2.20

2.50

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.94

0.88

2.02

3.30

1.04

0.98

2.90

3.80

6.5

m



chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 16 mA

T_j= 25 °C

5.5

0.1

0.3

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

24.0

2.36

4400

1.88

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

R_Gint

GAR

Rev. 0 – 19.07.2012

12 3 4 5

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