Datasheet > SKM400GAL17E4

SKM400GAL17E4

更新时间： 2024-11-10 14:53:59

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
7页	573K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

获取价格

技术参数
数据手册

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SKM400GAL17E4 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

SKM400GAL17E4 数据手册

SKM400GAL17E4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1700

614

474

400

1200

-20 ... 20

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITRANS^®3

IGBT4 Modules

SKM400GAL17E4

Features*

V_CC= 1000 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1700 V

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1700

443

327

800

2340

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

• IGBT4 = 4th generation medium fast

trench IGBT (Infineon)

-40 ... 175

°C

Freewheeling diode

• CAL4 = Soft switching 4th generation

CAL-Diode

• Insulated copper baseplate using DBC

Technology (Direct Copper Bonding)

• With integrated Gate resistor

• For switching frequencies up to 8kHz

• UL recognized, file no. E63532

T_j= 25 °C

V_RRM

I_F

1700

443

327

800

2340

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

-40 ... 175

°C

Typical Applications

Module

I_t(RMS)

T_stg

• Electronic welders

• DC/DC – converter

• Brake chopper

500

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

• Switched reluctance motor

V_isol

Remarks

Characteristics

• Case temperature limited

to T_c= 125°C max.

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

I_C= 400 A

T_j= 25 °C

V_CE(sat)

1.92

2.30

2.20

2.60

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

2.8

4.0

5.8

0.90

0.80

3.3

4.5

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE=V_CE, I_C= 16 mA

V_GE= 0 V, V_CE= 1700 V, T_j= 25 °C

f = 1 MHz

5.2

36.0

1.36

1.16

3200

1.9

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 4.0 – 10.09.2020

12 3 4 5 6 7

中文翻译

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