Datasheet > SKM300GB07E3

SKM300GB07E3

更新时间： 2024-11-06 14:53:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	555K
描述
IGBT Modules SEMITRANS 3 (106x62x31)

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中文翻译

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SKM300GB07E3 数据手册

SKM300GB07E3

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

650

394

297

300

900

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

V_CC= 360 V

-20 ... 20

SEMITRANS^®3

Trench IGBT Modules

SKM300GB07E3

_GE≤ 15 V

_CES≤ 650 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

650

335

244

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

300

600

2160

-40 ... 175

°C

Features*

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability, self limiting

to 6 x Icnom

• Fast & soft inverse CAL diodes

• Insulated copper baseplate using DBC

Technology (Direct Copper Bonding)

• With integrated gate resistor

Module

I_t(RMS)

T_stg

500

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

Typical Applications

Characteristics

• AC inverter drives

• UPS

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperature limited

to T_c= 125°C max.

I_C= 300 A

T_j= 25 °C

V_CE(sat)

1.45

1.69

1.90

2.10

_GE= 15 V

T_j= 150 °C

chiplevel

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.82

1.83

2.9

1.00

0.90

3.0

4.0

6.4

mΩ

chiplevel

• Use of soft R_Gnecessary

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE=V_CE, I_C= 4.8 mA

V_GE= 0 V, V_CE= 650 V, T_j= 25 °C

f = 1 MHz

5.1

5.8

0.3

18.5

1.16

0.55

2400

1.0

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

V_CC= 300 V

T_j= 150 °C

157

4.7

813

_C= 300 A

_GE= +15/-7.5 V

_{G on}= 2 Ω

_{G off}= 5.6 Ω

di/dt_on= 6100 A/µs

di/dt_off= 4500 A/µs

dv/dt = 1700 V/µs

L_s= 22 nH

T_j= 150 °C

E_off

13.6

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

per IGBT, pre-applied phase change

material

0.15

K/W

0.042

0.038

R_th(c-s)

K/W

Rev. 2.0 – 28.05.2019

12 3 4 5 6

中文翻译

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