Datasheet > SKM295GB066D

SKM295GB066D

更新时间： 2024-11-06 14:55:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	596K
描述
IGBT Modules SEMITRANS 2 (94x34x30)

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中文翻译

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数据手册

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SKM295GB066D 数据手册

SKM295GB066D

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

600

362

272

300

600

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®2

Trench IGBT Modules

SKM295GB066D

V_CC= 360 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 600 V

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

286

209

T_j= 175 °C

I_FRM

I_FSM

T_j

400

1773

-40 ... 175

°C

t_p= 10 ms, sin 180°, T_j= 25 °C

Features*

• V_CE(sat)with positive temperature

coefficient

Module

I_t(RMS)

T_stg

200

-40 ... 125

4000

°C

• High short circuit capability, self limiting

to 6 x Icnom

• Fast & soft switching inverse CAL

diodes

V_isol

AC sinus 50 Hz, t = 1 min

• Large clearance (10 mm) and

creepage distances (20 mm)

• Insulated copper baseplate using DBC

Technology (Direct Bonded Copper)

• UL recognized, file no. E63532

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 300 A

T_j= 25 °C

V_CE(sat)

1.45

1.69

1.85

2.10

Typical Applications

_GE= 15 V

T_j= 150 °C

chiplevel

• AC inverter drives

• UPS

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.85

1.83

2.8

1.00

0.90

2.8

4.0

6.5

mΩ

chiplevel

• Electronic welders

V_GE= 15 V

chiplevel

Remarks

• Case temperature limited to T_c= 125°C

max, recommended T_op= -40 ...

+150°C

V_GE(th)

I_CES

V_GE=V_CE, I_C= 4.8 mA

T_j= 25 °C

5.8

0.2

V_GE= 0 V

_CE= 600 V

• Product reliability results are valid for T_j

≤ 150°C

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

18.5

1.15

0.55

1700

1.0

• Short circuit data: Use of soft R_G

necessary!

V_CE= 25 V

_GE= 0 V

• Take care of over-voltage caused by

stray inductances

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 300 V

T_j= 150 °C

_C= 300 A

157

20.5

1537

112

_GE= +15/-8 V

_{G on}= 5.6 Ω

_{G off}= 14 Ω

di/dt_on= 1770 A/µs

di/dt_off= 2450 A/µs

dv/dt = 1160 V/µs

L_s= 32 nH

T_j= 150 °C

E_off

R_th(j-c)

per IGBT

0.172

K/W

Rev. 1.0 – 28.07.2020

12 3 4 5 6

中文翻译

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