Datasheet > SKM260MB170SCH17

SKM260MB170SCH17

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
8页	814K
描述
SiC Modules SEMITRANS 3 (106x62x31)

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中文翻译

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SKM260MB170SCH17 数据手册

SKM260MB170SCH17

Absolute Maximum Ratings

Symbol Conditions

MOSFET

Values

Unit

T_j= 25 °C

V_DSS

I_D

1700

378

301

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_DM

PW ≤ 10µs, Duty cycle ≤ 1%

980

I_{DM,repetitive}

790

V_GS

T_j

-6 ... 22

-40 ... 175

°C

SEMITRANS^®3

SiC MOSFET Module

SKM260MB170SCH17

Features*

Absolute Maximum Ratings

Symbol Conditions

Inverse diode

V_RRM

I_F

Values

Unit

T_j= 25 °C

1700

552

428

300

900

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

• Full Silicon Carbide (SiC) power

module

t_p= 10 ms, sin 180°, T_j= 150 °C,

including body diode

• High reliability 2^ndGeneration SiC

MOSFETs

I_FSM

T_j

2030

-40 ... 175

°C

• Optimized for fast switching and lowest

power losses

Absolute Maximum Ratings

Symbol Conditions

Module

I_t(RMS)

T_stg

• External SiC Schottky Barrier Diode

embedded

Values

Unit

• Insulated copper baseplate using DBC

technology (Direct Bonded Copper)

• Improved thermal performances with

Aluminum Nitride (AlN) substrate

• UL recognized, file no. E63532

500

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

Typical Applications

• High frequency power supplies

• AC inverters

• Traction APU

• EV Chargers

• Industrial Test Systems

Remarks

• Case temperature limited to T_C= 125°C

max.

• Recommended T_jop= -40 ... +150°C

• Gate-Source SURGE VOLTAGE

(t_surge<300ns), V_{GS_surge}= -10V ... +26V

Rev. 1.0 – 04.11.2020

12 3 4 5 6 7 8

中文翻译

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