Datasheet > SKM1400GB17P4

SKM1400GB17P4

更新时间： 2024-11-25 14:54:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
7页	1075K
描述
Chips SEMITRANS 10 (250x90x38)

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中文翻译

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SKM1400GB17P4 数据手册

SKM1400GB17P4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1700

2081

1383

1400

2800

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®10

IGBT4 Modules

SKM1400GB17P4

Features*

V_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1700 V

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1700

1702

1052

2800

9024

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

• Symmetrical current sharing

• Low-inductive module design

• High mechanical robustness

• UL recognized, file no. E63532

-40 ... 175

°C

Module

I_t(RMS)

T_stg

1000

-40 ... 150

4000

°C

V_isol

AC sinus 50 Hz, t = 1 min

Typical Applications

• Motor Drives

• UPS Systems

• Solar Inverters

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

Recommended T_jop= -40 ... +150°C

I_C= 1400 A

T_j= 25 °C

V_CE(sat)

1.84

2.33

2.14

2.64

I_DC≤ 1000A for T_Terminal= 100°C

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.85

0.67

1.06

5.8

1.00

0.95

0.82

1.21

6.3

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE=V_CE, I_C= 56.4 mA

V_GE= 0 V, V_CE= 1700 V, T_j= 25 °C

f = 1 MHz

V_GE= - 15 V...+ 15 V

T_j= 25 °C

5.3

114.0

6.8

4.08

15150

1.6

960

150

760

1230

210

V_CE= 25 V

_GE= 0 V

V_CC= 900 V

T_j= 150 °C

_C= 1400 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 1 Ω

_{G off}= 1 Ω

di/dt_on= 8.7 kA/µs

di/dt_off= 5.4 kA/µs

dv/dt = 3200 V/µs

L_s= 25 nH

T_j= 150 °C

E_off

615

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

per IGBT, pre-applied phase change

material

0.02

K/W

0.018

0.014

R_th(c-s)

K/W

Rev. 1.0 – 31.05.2022

12 3 4 5 6 7

中文翻译

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