Datasheet > SKM1400GAR17R8

SKM1400GAR17R8

更新时间： 2023-12-06 20:03:32

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
8页	1126K
描述
IGBT Modules SEMITRANS 10 (250x90x38)

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中文翻译

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SKM1400GAR17R8 数据手册

SKM1400GAR17R8

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1700

2337

1527

1400

2800

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®10

IGBT R8 Modules

SKM1400GAR17R8

Features*

V_CC= 1200 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1700 V

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1700

1874

1168

2800

9024

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

• Symmetrical current sharing

• Low-inductive module design

• High mechanical robustness

• UL recognized, file no. E63532

-40 ... 175

°C

Freewheeling diode

T_j= 25 °C

V_RRM

I_F

1700

1874

1168

2800

9024

T_c= 25 °C

T_c= 100 °C

Typical Applications

• Brake chopper

• Windturbines

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

Remarks

Recommended T_jop= -40 ... +150°C

-40 ... 175

°C

Module

T_stg

V_isol

-40 ... 150

4000

°C

AC sinus 50 Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 1400 A

T_j= 25 °C

V_CE(sat)

1.63

1.96

1.95

2.27

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

1.06

0.95

0.41

0.72

5.8

1.12

1.05

0.59

0.87

6.5

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_CE= 10 V, I_C= 52.8 mA

V_GE= 0 V, V_CE= 1700 V, T_j= 25 °C

f = 1 MHz

V_GE= - 15 V...+ 15 V

T_j= 25 °C

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

6.0

139.2

4.80

0.43

8640

1.3

V_CE= 25 V

_GE= 0 V

R_Gint

GAR

Rev. 1.0 – 09.09.2020

12 3 4 5 6 7 8

中文翻译

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