Datasheet > SKM1400GAL12P4

SKM1400GAL12P4

更新时间： 2023-12-06 20:02:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
8页	1124K
描述
IGBT Modules SEMITRANS 10 (250x90x38)

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中文翻译

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数据手册

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SKM1400GAL12P4 数据手册

SKM1400GAL12P4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

2165

1453

1400

2800

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®10

IGBT4 Modules

SKM1400GAL12P4

Features*

V_CC= 800 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1200

1849

1181

2800

7296

T_c= 25 °C

T_c= 100 °C

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

• Symmetrical current sharing

• Low-inductive module design

• High mechanical robustness

• UL recognized, file no. E63532

-40 ... 175

°C

Freewheeling diode

T_j= 25 °C

V_RRM

I_F

1200

1849

1181

2800

7296

T_c= 25 °C

T_c= 100 °C

Typical Applications

• Brake chopper

• Windturbines

T_j= 175 °C

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 25 °C

Remarks

Recommended T_jop= -40 ... +150°C

-40 ... 175

°C

Module

T_stg

V_isol

-40 ... 150

4000

°C

AC sinus 50 Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

I_C= 1400 A

T_j= 25 °C

V_CE(sat)

1.75

2.18

2.07

2.44

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

0.68

1.06

5.8

0.90

0.80

0.83

1.17

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

V_GE=V_CE, I_C= 49.2 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.1

81.6

5.28

4.50

7500

0.6

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 1.0 – 08.09.2020

12 3 4 5 6 7 8

中文翻译

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