Datasheet > SKM125KD12SC

SKM125KD12SC

更新时间： 2024-11-25 14:53:47

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
4页	256K
描述
SiC Modules SEMITRANS 3 (106x62x31)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SKM125KD12SC 数据手册

SKM125KD12SC

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

264

200

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FSM

i²t

180

630

1984

-40 ... 175

A²s

°C

10 ms, sin 180°, T_j= 150 °C

SEMITRANS^®3

SiC Bridge Rectifier

SKM125KD12SC

Features*

T_j

Absolute Maximum Ratings

Symbol Conditions

Module

I_t(RMS)

T_stg

Values

Unit

500

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• Full Silicon Carbide (SiC) power

module

Characteristics

Symbol Conditions

Diode 1

V_F

min.

typ.

max.

Unit

• 1200V SiC Schottky FWDs

• High frequency rectifier

• Improved thermal performances with

Aluminium Nitride (AlN) substrate

• UL recognized, file no. E63532

I_F= 180 A

T_j= 25 °C

1.36

1.70

1.55

1.98

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

0.95

0.80

2.3

5.0

0.840

1.05

0.90

2.8

mΩ

Typical Applications

chiplevel

• Rectifiers for DC/DC converters

r_F

• High frequency rectifier applications

chiplevel

6.0

Remarks

• Case temperature limited to T_C=125°C

• Recommended T_jop= -40…+150°C

V_R= 800 V, f = 1 MHz, T_j= 25 °C

V_R= 800 V, di/dt_off= 500 A/µs,

T_j= 25 °C

C_j

Q_c

0.67

µC

R_th(j-c)

per diode

0.215

K/W

Characteristics

Symbol Conditions

min.

typ.

max.

Unit

Module

L_CE

R_CC'+EE'

0.55

0.85

mΩ

_C= 25 °C

_C= 125 °C

measured per

switch

calculated without thermal coupling

(λ_grease=0.81 W/(m*K))

R_th(c-s)

0.02

0.038

K/W

M_s

M_t

to heat sink M6

2.5

to terminals M6

325

Rev. 3.0 – 16.04.2020

12 3 4

中文翻译

下载PDF

与SKM125KD12SC相关器件

型号	品牌	获取价格	描述	数据表
SKM1400GAL12P4	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400GAL17R8	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400GAR12P4	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400GAR17R8	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400GB12P4	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400GB17P4	SEMIKRON	获取价格	Chips SEMITRANS 10 (250x90x38)
SKM1400GB17R8	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400MLI12BM7	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM1400MLI12TM7	SEMIKRON	获取价格	IGBT Modules SEMITRANS 10 (250x90x38)
SKM141	SEMIKRON	获取价格	Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Me