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SKKT 570/18 E PDF预览

SKKT 570/18 E

更新时间: 2024-11-06 14:54:51
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赛米控丹佛斯 - SEMIKRON /
页数 文件大小 规格书
4页 636K
描述
Thyristor / Diode Modules SEMIPACK 5 (150x60x52)

SKKT 570/18 E 数据手册

 浏览型号SKKT 570/18 E的Datasheet PDF文件第2页浏览型号SKKT 570/18 E的Datasheet PDF文件第3页浏览型号SKKT 570/18 E的Datasheet PDF文件第4页 
SKKT 570/18 E  
Absolute Maximum Ratings  
Symbol Conditions  
Chip  
Values  
Unit  
Tc = 85 °C  
Tc = 100 °C  
IT(AV)  
570  
435  
A
A
sinus 180°  
ITRMS  
ITSM  
continuous operation  
1000  
A
A
A
A²s  
A²s  
V
V
V
Tj = 25 °C  
Tj = 135 °C  
Tj = 25 °C  
Tj = 135 °C  
19000  
15500  
1805000  
1201250  
1900  
1800  
1800  
250  
1000  
10 ms  
10 ms  
i2t  
SEMIPACK® 5  
Thyristor Modules  
SKKT 570/18 E  
Features  
ꢀ Heat transfer through aluminium nitride  
ceramic isolated metal baseplate  
ꢀ Precious metal pressure contacts for  
high reliability  
ꢀ Thyristor with amplifying gate  
ꢀ UL recognized, file no. E 63 532  
VRSM  
VRRM  
VDRM  
(di/dt)cr  
(dv/dt)cr  
Tj  
Tj = 135 °C  
Tj = 135 °C  
A/µs  
V/µs  
°C  
-40 ... 135  
Module  
Tstg  
Visol  
-40 ... 125  
3000  
3600  
°C  
V
V
1 min  
1 s  
a.c.; 50 Hz; r.m.s.  
Characteristics  
Symbol Conditions  
Chip  
VT  
VT(TO)  
rT  
IDD;IRD  
tgd  
tgr  
tq  
IH  
IL  
VGT  
IGT  
VGD  
IGD  
Rth(j-c)  
min.  
typ.  
max.  
Unit  
Typical Applications*  
ꢀ AC motor softstarters  
ꢀ Input converters for AC inverter drives  
ꢀ DC motor control (e.g. for machine  
tools)  
ꢀ Temperature control (e.g. for ovens,  
chemical, processes)  
ꢀ Professionals light dimming (studios,  
theaters)  
Tj = 25 °C, IT = 1700 A  
1.44  
0.78  
0.32  
225  
V
V
m  
mA  
µs  
Tj = 135 °C  
Tj = 135 °C  
Tj = 135 °C, VDD = VDRM; VRD = VRRM  
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs  
VD = 0.67 * VDRM  
1
2
200  
150  
300  
µs  
µs  
Tj = 135 °C  
Tj = 25 °C  
500  
2000  
mA  
mA  
V
mA  
V
mA  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
Tj = 25 °C, RG = 33 Ω  
Tj = 25 °C, d.c.  
3
200  
Tj = 25 °C, d.c.  
Tj = 135 °C, d.c.  
Tj = 135 °C, d.c.  
0.25  
10  
per chip  
per module  
per chip  
per module  
per chip  
per module  
0.069  
0.034  
0.072  
0.036  
0.077  
0.038  
continuous DC  
Rth(j-c)  
Rth(j-c)  
sin. 180°  
rec. 120°  
Module  
Rth(c-s)  
chip  
module  
to heatsink M6  
to heatsink M10  
0.02  
0.01  
5.75  
13.8  
5 * 9,81  
K/W  
K/W  
Nm  
Nm  
m/s²  
g
Ms  
Mt  
a
4.25  
10.2  
w
1400  
SKKT  
© by SEMIKRON  
Rev. 2 – 09.12.2014  
1

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