Datasheet > SKKT 570/18 E

SKKT 570/18 E

更新时间： 2024-09-15 14:54:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
4页	636K
描述
Thyristor / Diode Modules SEMIPACK 5 (150x60x52)

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SKKT 570/18 E 数据手册

SKKT 570/18 E

Absolute Maximum Ratings

Symbol Conditions

Chip

Values

Unit

T_c= 85 °C

T_c= 100 °C

I_T(AV)

570

435

sinus 180°

I_TRMS

I_TSM

continuous operation

1000

A²s

T_j= 25 °C

T_j= 135 °C

T_j= 25 °C

T_j= 135 °C

19000

15500

1805000

1201250

1900

1800

250

1000

10 ms

i²t

SEMIPACK^®5

Thyristor Modules

SKKT 570/18 E

Features

ꢀ Heat transfer through aluminium nitride

ceramic isolated metal baseplate

ꢀ Precious metal pressure contacts for

high reliability

ꢀ Thyristor with amplifying gate

ꢀ UL recognized, file no. E 63 532

V_RSM

V_RRM

V_DRM

(di/dt)_cr

(dv/dt)_cr

T_j

T_j= 135 °C

A/µs

V/µs

°C

-40 ... 135

Module

T_stg

V_isol

-40 ... 125

3000

3600

°C

1 min

1 s

a.c.; 50 Hz; r.m.s.

Characteristics

Symbol Conditions

Chip

V_T

V_T(TO)

r_T

I_DD;I_RD

t_gd

t_gr

t_q

I_H

I_L

V_GT

I_GT

V_GD

I_GD

R_th(j-c)

min.

typ.

max.

Unit

Typical Applications*

ꢀ AC motor softstarters

ꢀ Input converters for AC inverter drives

ꢀ DC motor control (e.g. for machine

tools)

ꢀ Temperature control (e.g. for ovens,

chemical, processes)

ꢀ Professionals light dimming (studios,

theaters)

T_j= 25 °C, I_T= 1700 A

1.44

0.78

0.32

225

mΩ

µs

T_j= 135 °C

T_j= 135 °C, V_DD= V_DRM; V_RD= V_RRM

T_j= 25 °C, I_G= 1 A, di_G/dt = 1 A/µs

V_D= 0.67 * V_DRM

200

150

300

µs

T_j= 135 °C

T_j= 25 °C

500

2000

K/W

T_j= 25 °C, R_G= 33 Ω

T_j= 25 °C, d.c.

200

T_j= 25 °C, d.c.

T_j= 135 °C, d.c.

0.25

per chip

per module

per chip

per module

per chip

per module

0.069

0.034

0.072

0.036

0.077

0.038

continuous DC

R_th(j-c)

sin. 180°

rec. 120°

Module

R_th(c-s)

chip

module

to heatsink M6

to heatsink M10

0.02

0.01

5.75

13.8

5 * 9,81

K/W

m/s²

M_s

M_t

4.25

10.2

1400

SKKT

Rev. 2 – 09.12.2014

12 3 4

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