Datasheet > SKKT 323/18 E

SKKT 323/18 E

更新时间： 2024-11-06 14:52:39

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
5页	823K
描述
Thyristor / Diode Modules SEMIPACK 3 (115x50x52)

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SKKT 323/18 E 数据手册

SKKT 323/18 E

Absolute Maximum Ratings

Symbol Conditions

Chip

Values

Unit

T_c= 85 °C

T_c= 100 °C

T_j= 25 °C

T_j= 130 °C

T_j= 25 °C

T_j= 130 °C

I_T(AV)

320

241

9500

sinus 180°

I_TSM

10 ms

8200

i²t

451250

336200

1900

1800

130

1000

-40 ... 130

A²s

A/µs

V/µs

°C

10 ms

SEMIPACK^®3

Thyristor Modules

SKKT 323/18 E

Features*

V_RSM

V_RRM

V_DRM

(di/dt)_cr

(dv/dt)_cr

T_j

T_j= 130 °C

Module

T_stg

V_isol

-40 ... 125

3000

3600

°C

1 min

1 s

a.c.; 50 Hz; r.m.s.

• Industrial standard package

• Electrically insulated base plate

• Heat transfer through aluminum oxide

ceramic insulated metal base plate

• Chip soldered on direct copper bonded

Al₂O₃ceramic

Characteristics

Symbol Conditions

Chip

V_T

V_T(TO)

r_T

I_DD;I_RD

t_gd

t_gr

t_q

I_H

I_L

V_GT

I_GT

V_GD

I_GD

R_th(j-c)

min.

typ.

max.

Unit

• UL recognition, file no. E63532

T_j= 25 °C, I_T= 750 A

1.45

0.81

0.85

100

mΩ

µs

Typical Applications

T_j= 130 °C

• DC motor control (e. g. for machine

tools)

T_j= 130 °C, V_DD= V_DRM; V_RD= V_RRM

T_j= 25 °C, I_G= 1 A, di_G/dt = 1 A/µs

V_D= 0.67 * V_DRM

• Temperature control (e. g. for ovens,

chemical processes)

150

300

µs

• Professional light dimming (studios,

theaters)

T_j= 130 °C

T_j= 25 °C

500

2000

K/W

T_j= 25 °C, R_G= 33 Ω

T_j= 25 °C, d.c.

150

T_j= 25 °C, d.c.

T_j= 130 °C, d.c.

0.25

per chip

per module

per chip

per module

per chip

per module

0.091

0.0455

0.095

0.048

0.11

cont.

R_th(j-c)

sin. 180°

rec. 120°

0.055

Module

R_th(c-s)

chip

module

to heatsink M5

to terminals M8

0.08

0.04

K/W

m/s²

M_s

M_t

4.25

7.65

5.75

10.35

5 * 9.81

410

SKKT

Rev. 4.0 – 07.04.2020

12 3 4 5

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