Datasheet > SKKT 280/22 E H4

SKKT 280/22 E H4

更新时间： 2024-11-06 14:57:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
5页	819K
描述
Thyristor / Diode Modules SEMIPACK 3 (115x50x52)

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SKKT 280/22 E H4 数据手册

SKKT 280/22 E H4

Absolute Maximum Ratings

Symbol Conditions

Chip

Values

Unit

T_c= 85 °C

T_c= 79 °C

I_T(AV)

252

280

sinus 180°

I_TRMS

I_TSM

continuous operation

440

8500

7500

361250

281250

2300

2200

A²s

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

10 ms

i²t

SEMIPACK^®3

Thyristor Modules

SKKT 280/22 E H4

Features*

• Heat transfer through aluminum nitride

ceramic insulated metal baseplate

• Precious metal pressure contacts for

high reliability

• Thyristor with amplifying gate

• UL recognized, file no. E 63 532

V_RSM

V_RRM

V_DRM

(di/dt)_cr

(dv/dt)_cr

T_j

T_j= 125 °C

250

1000

-40 ... 125

A/µs

V/µs

°C

Module

T_stg

V_isol

-40 ... 125

4000

4800

°C

1 min

1 s

a.c.; 50 Hz; r.m.s.

Characteristics

Symbol Conditions

Chip

V_T

V_T(TO)

r_T

I_DD;I_RD

t_gd

min.

typ.

max.

Unit

Typical Applications

T_j= 25 °C, I_T= 750 A

1.55

0.90

0.75

mΩ

µs

• DC motor control (e. g. for machine

tools)

T_j= 125 °C

• AC motor starters

• Temperature control (e. g. for ovens,

chemical processes)

T_j= 125 °C, V_DD= V_DRM; V_RD= V_RRM

T_j= 25 °C, I_G= 1 A, di_G/dt = 1 A/µs

V_D= 0.67 * V_DRM

• Professional light dimming (studios,

theaters)

t_gr

µs

T_j= 125 °C

T_j= 25 °C

T_j= 25 °C, R_G= 33 Ω

T_j= 25 °C, d.c.

t_q

I_H

I_L

V_GT

I_GT

V_GD

I_GD

R_th(j-c)

150

300

150

500

2000

µs

K/W

200

T_j= 125 °C, d.c.

0.25

0.11

0.055

0.116

0.058

0.13

per chip

per module

per chip

per module

per chip

per module

continuous DC

R_th(j-c)

sin. 180°

rec. 120°

0.065

Module

R_th(c-s)

chip

module

to heatsink M5

to terminals M8

0.04

0.02

K/W

m/s²

M_s

M_t

4.25

7.65

5.75

10.34

5 * 9.81

600

SKKT

Rev. 2.0 – 12.11.2020

12 3 4 5

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