Datasheet > SKiiP 37NAC12T4V1

SKiiP 37NAC12T4V1

更新时间： 2023-12-06 20:08:55

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	1089K
描述
IGBT Modules MiniSKiiP II 3 (82x59x16)

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SKiiP 37NAC12T4V1 数据手册

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SKiiP 37NAC12T4V1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

1200

106

225

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

I_C

λ_paste=0.8 W/(mK)

T_j= 175 °C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

MiniSKiiP^®3

V_CC= 800 V

3-phase Converter – Inverter

(CI)

t_psc

_GE≤ 15 V

T_j= 150 °C

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

Inverse - Diode

T_j= 25 °C

SKiiP 37NAC12T4V1

V_RRM

I_F

1200

225

430

-40 ... 175

°C

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Features*

• Trench 4 IGBTs

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Robust and soft switching freewheeling

diodes in CAL technology

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 150 °C

• Highly reliable spring contacts for

electrical connections

• UL recognized: File no. E63532

Rectifier - Diode

T_j= 25 °C

V_RRM

I_F

1600

700

490

2450

1200

-40 ... 150

A²s

°C

Remarks

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

λ_paste=0.8 W/(mK)

T_j= 150 °C

• Max. case temperature limited to

T_C=125°C

I_F

λ_paste=2.5 W/(mK)

T_j= 150 °C

• Product reliability results valid for

T_j≤150°C (recommended

_j,op=-40...+150°C)

I_FSM

i²t

t_p= 10 ms

sin 180°

• Please refer to MiniSKiiP “Technical

Explanations” and “Mounting

t_p= 10 ms

sin 180°

Instructions” for further information

T_j

Module

I_t(RMS)

T_stg

T_terminal= 80 °C, 20 A per spring

module without TIM

AC sinus 50 Hz, 1 min

-40 ... 125

2500

°C

V_isol

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

I_C= 75 A

T_j= 25 °C

V_CE(sat)

1.85

2.25

2.10

2.45

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

5.8

0.90

0.80

6.5

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE= V_CE, I_C= 3 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

NAC

Rev. 3.0 – 01.10.2021

12 3 4 5 6

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