Datasheet > SKiiP 35NAB12T7V1

SKiiP 35NAB12T7V1

更新时间： 2023-12-06 20:11:48

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
9页	1098K
描述
IGBT Modules MiniSKiiP II 3 (82x59x16)

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SKiiP 35NAB12T7V1 数据手册

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SKiiP 35NAB12T7V1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

1200

100

-20 ... 20

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

I_C

λ_paste=0.8 W/(mK)

T_j= 175 °C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

MiniSKiiP^®3

V_CC= 800 V

3-phase

t_psc

_GE≤ 15 V

T_j= 175 °C

µs

°C

_CES≤ 1200 V

Converter-Inverter-Brake

(CIB)

T_j

-40 ... 175

Chopper - IGBT

T_j= 25 °C

V_CES

I_C

1200

100

-20 ... 20

SKiiP 35NAB12T7V1

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

Features*

• 1200V Generation 7 IGBTs (T7)

• Robust and soft switching freewheeling

diodes in CAL technology

I_Cnom

I_CRM

V_GES

• New SKR PEP diode technology for

enhanced power and environmental

robustness

V_CC= 800 V

_GE≤ 15 V

T_j= 175 °C

t_psc

µs

°C

_CES≤ 1200 V

• Highly reliable spring contacts for

electrical connections

T_j

-40 ... 175

• UL recognized: File no. E63532

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

100

270

-40 ... 175

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Remarks

• Max. case temperature limited to

TC=TS=125 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Product reliability results valid for

Tj≤150 °C; Tj,op >150°C during

overload (Details see AN19-002)

• MiniSKiiP ″Technical Explanations″

and ″Mounting Instructions″ are part of

the data sheet Please refer to both

documents for further information

• For storage and case temperature with

TIM see document ″Technical

Explanations Thermal Interface

Materials″

I_FRM

I_FSM

T_j

t_p= 10 ms, sin 180°, T_j= 150 °C

Freewheeling - Diode

T_j= 25 °C

V_RRM

I_F

1200

100

270

-40 ... 175

°C

T_s= 70 °C

T_s= 100 °C

T_s= 70 °C

T_s= 100 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Inverter IGBT: T1 – T6

• Chopper IGBT: T14

I_FRM

I_FSM

T_j

• Inverse Diode: D1 – D6

t_p= 10 ms, sin 180°, T_j= 150 °C

• Freewheeling Diode: D13

• Rectifier Diode: D7 – D12

NAB

Rev. 2.0 – 28.07.2021

12 3 4 5 6 7...9

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