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SKiiP 1814 GB12E4-3DUW V2 PDF预览

SKiiP 1814 GB12E4-3DUW V2

更新时间: 2024-11-21 14:55:47
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赛米控丹佛斯 - SEMIKRON /
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描述
IPM SKiiP4 (290x215x102)

SKiiP 1814 GB12E4-3DUW V2 数据手册

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SKiiP 1814 GB12E4-3DUW V2  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
System  
1)  
VCC  
Visol  
Operating DC link voltage  
DC, t = 1 s, each polarity  
per AC terminal, rms, sinusoidal current  
max. peak current of power section  
Tj = 175 °C, tp = 10 ms, sin 180°  
Tj = 175 °C, tp = 10 ms, diode  
900  
4300  
500  
2700  
11907  
709  
V
V
A
A
A
It(RMS)  
Imax (peak)  
IFSM  
I²t  
kA²s  
SKiiP® 4  
fundamental output frequency  
(sinusoidal)  
storage temperature  
fout  
1
kHz  
°C  
Tstg  
-40 ... 85  
2-pack-integrated intelligent  
Power System  
IGBT  
VCES  
IC  
Tj = 25 °C  
Ts = 25 °C  
Tj = 175 °C  
1200  
2345  
1906  
1800  
-40 ... 175  
V
A
A
A
°C  
Ts = 70 °C  
SKiiP 1814 GB12E4-3DUW V2  
ICnom  
2)  
Tj  
junction temperature  
Diode  
VRRM  
IF  
Features*  
• Intelligent Power Module  
• Integrated current and temperature  
measurement  
Tj = 25 °C  
Ts = 25 °C  
Tj = 175 °C  
1200  
1776  
1408  
1800  
-40 ... 175  
V
A
A
A
°C  
Ts = 70 °C  
• Integrated DC-link measurement  
• Solder free power section  
• IGBT4 and CAL4F technology  
• Tjmax = 175°C  
IFnom  
2)  
Tj  
junction temperature  
Driver  
V s  
ViH  
dv/dt  
fsw  
• Safety isolated switching and sensor  
signals  
power supply  
19.2 ... 28.8  
Vs + 0.3  
75  
V
V
kV/µs  
kHz  
input signal voltage (high)  
secondary to primary side  
switching frequency  
• Digital signal transmission  
• CAN Interface  
• 100% tested IPM  
15  
• RoHS compliant  
• UL file no. E242581  
Characteristics  
Typical Applications  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Renewable energies  
• Traction  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE(sat)  
2.01  
2.49  
0.80  
0.70  
0.67  
1.00  
703  
2.26  
2.69  
0.90  
0.80  
0.76  
1.05  
V
V
V
IC = 1800 A  
at terminal  
• Elevators  
• Industrial drives  
VCE0  
Remarks  
For further information please refer to  
SKiiP®4 Technical Explanation  
V
rCE  
mΩ  
mΩ  
mJ  
mJ  
K/W  
K/W  
at terminal  
V
V
CC = 600 V  
CC = 900 V  
Eon + Eoff  
Footnotes  
IC = 1800 A  
Tj = 150 °C  
1) With assembly of suitable MKP capacitor  
per terminal  
1260  
Rth(j-s)  
Rth(j-r)  
per IGBT switch  
per IGBT switch  
0.021  
0.0152  
2) The specified maximum operation junction  
temperature Tvjop is 150°C  
GB  
© by SEMIKRON  
Rev. 2.0 – 19.07.2019  
1

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