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SKiiP 1803 GB172-3DL V3 PDF预览

SKiiP 1803 GB172-3DL V3

更新时间: 2024-11-07 14:54:59
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赛米控丹佛斯 - SEMIKRON /
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描述
IPM SKiiP3 (280x215x156)

SKiiP 1803 GB172-3DL V3 数据手册

 浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第2页浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第3页浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第4页浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第5页浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第6页浏览型号SKiiP 1803 GB172-3DL V3的Datasheet PDF文件第7页 
SKiiP 1803 GB172-3DL V3  
Absolute Maximum Ratings  
Ts = 25°C unless otherwise specified  
Symbol Conditions  
Values  
Unit  
System  
1)  
VCC  
Visol  
It(RMS)  
IFSM  
I²t  
Operating DC link voltage  
1200  
5600  
400  
10200  
520  
V
V
A
DC, t = 1 s, main terminals to heat sink  
per AC terminal, Tterminal <115°C  
Tj = 150 °C, tp = 10 ms, sin 180°  
Tj = 150 °C, tp = 10 ms, diode  
fundamental output frequency  
storage temperature  
A
kA²s  
kHz  
°C  
fout  
Tstg  
1
SKiiP® 3  
-40 ... 85  
IGBT  
VCES  
IC  
Tj = 25 °C  
1700  
1744  
1346  
V
A
A
2-pack-integrated intelligent  
Power System  
Ts = 25 °C  
Ts = 70 °C  
Tj = 150 °C  
ICnom  
Tj  
1800  
-40 ... 150  
A
°C  
junction temperature  
SKiiP 1803 GB172-3DL V3  
Features  
Diode  
VRRM  
IF  
Tj = 25 °C  
1700  
1454  
1110  
1400  
-40 ... 150  
V
A
A
A
°C  
Ts = 25 °C  
Tj = 150 °C  
ꢀ SKiiP technology inside  
ꢀ Trench IGBTs  
Ts = 70 °C  
IFnom  
Tj  
ꢀ CAL diode technology  
ꢀ Integrated current sensor  
ꢀ Integrated temperature sensor  
ꢀ Integrated heat sink  
junction temperature  
Driver  
V s  
ViH  
VisolPD  
dv/dt  
fsw  
power supply  
13 ... 30  
15 + 0.3  
1500  
75  
V
V
V
kV/µs  
kHz  
ꢀ UL recognized File no. E63532  
input signal voltage (high)  
QPD <= 10pC, PRIM to POWER  
secondary to primary side  
switching frequency  
Typical Applications*  
ꢀ Renewable energies  
ꢀ Traction  
9
ꢀ Elevators  
ꢀ Industrial drives  
Characteristics  
Ts = 25°C unless otherwise specified  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
Footnotes  
1) With assembly of suitable MKP capacitor  
per terminal  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
VCE(sat)  
1.9  
2.2  
1.00  
0.90  
0.99  
1.4  
2.4  
V
V
V
IC = 900 A  
at terminal  
VCE0  
1.20  
1.10  
1.3  
V
rCE  
m  
mΩ  
mJ  
mJ  
K/W  
K/W  
at terminal  
1.7  
V
CC = 900 V  
Eon + Eoff  
585  
863  
IC = 900 A  
Tj = 125 °C  
VCC = 1200 V  
Rth(j-s)  
Rth(j-r)  
per IGBT switch  
per IGBT switch  
0.017  
0.0096  
S33  
© by SEMIKRON  
Rev. 0 – 13.08.2014  
1

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