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SKiiP 13NAB12T7V1 PDF预览

SKiiP 13NAB12T7V1

更新时间: 2024-11-06 14:54:35
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
9页 1005K
描述
IGBT Modules MiniSKiiP II 1 (42x40x16)

SKiiP 13NAB12T7V1 数据手册

 浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第2页浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第3页浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第4页浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第5页浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第6页浏览型号SKiiP 13NAB12T7V1的Datasheet PDF文件第7页 
SKiiP 13NAB12T7V1  
Absolute Maximum Ratings  
Symbol Conditions  
Inverter - IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
1200  
38  
31  
42  
34  
25  
50  
-20 ... 20  
V
A
A
A
A
A
A
V
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
IC  
IC  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
MiniSKiiP® 1  
VCC = 800 V  
3-phase  
tpsc  
V
V
GE 15 V  
Tj = 175 °C  
7
µs  
°C  
CES 1200 V  
Converter-Inverter-Brake  
(CIB)  
Tj  
-40 ... 175  
Chopper - IGBT  
Tj = 25 °C  
VCES  
IC  
1200  
38  
31  
42  
34  
25  
50  
-20 ... 20  
V
A
A
A
A
A
A
V
SKiiP 13NAB12T7V1  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
Features*  
• 1200V Generation 7 IGBTs (T7)  
• Robust and soft switching freewheeling  
diodes in CAL technology  
ICnom  
ICRM  
VGES  
• New SKR PEP diode technology for  
enhanced power and environmental  
robustness  
VCC = 800 V  
V
V
GE 15 V  
Tj = 175 °C  
tpsc  
7
µs  
°C  
CES 1200 V  
• Highly reliable spring contacts for  
electrical connections  
Tj  
-40 ... 175  
• UL recognized: File no. E63532  
Inverse - Diode  
Tj = 25 °C  
VRRM  
IF  
1200  
27  
22  
30  
24  
50  
100  
-40 ... 175  
V
A
A
A
A
A
A
°C  
Remarks  
• Max. case temperature limited to  
TC=TS=125 °C  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IF  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
• Product reliability results valid for  
Tj150 °C; Tj,op >150°C during  
overload (Details see AN19-002)  
• MiniSKiiP Technical Explanations″  
and Mounting Instructionsare part of  
the data sheet Please refer to both  
documents for further information  
• For storage and case temperature with  
TIM see document Technical  
Explanations Thermal Interface  
Materials″  
IFRM  
IFSM  
Tj  
tp = 10 ms, sin 180°, Tj = 150 °C  
Freewheeling - Diode  
Tj = 25 °C  
VRRM  
IF  
1200  
27  
22  
30  
24  
50  
100  
-40 ... 175  
V
A
A
A
A
A
A
°C  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IF  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
• Inverter IGBT: T1 – T6  
• Chopper IGBT: T14  
• Inverse Diode: D1 – D6  
IFRM  
IFSM  
Tj  
• Freewheeling Diode: D13  
• Rectifier Diode: D7 – D12  
tp = 10 ms, sin 180°, Tj = 150 °C  
NAB  
© by SEMIKRON  
Rev. 2.0 – 30.06.2021  
1

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