Datasheet > SKI07114

SKI07114

更新时间： 2024-09-14 19:49:15

品牌	Logo	应用领域
三垦 - SANKEN		/
页数	文件大小	规格书
8页	598K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SKI07114 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	8.07
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SKI07114 数据手册

75 V, 62 A, 7.2 mΩ Low RDS(ON)

N ch Trench Power MOSFET

SKI07114

Features

Package

TO-263

 V_(BR)DSS--------------------------------- 75 V (I_D= 100 µA)

 I_D----------------------------------------------------------62 A

 R_DS(ON)----------9.7 mΩ max. (V_GS= 10 V, I_D= 31.2 A)

 Q_g------ 25.0nC (V_GS= 4.5 V, V_DS= 38 V, I_D= 31.2 A)

(4)

 Low Total Gate Charge

 High Speed Switching

 Low On-Resistance

 Capable of 4.5 V Gate Drive

 100 % UIL Tested

Not to scale

(1) (2) (3)

 RoHS Compliant

Applications

Equivalent circuit

 DC-DC converters

 Synchronous Rectification

 Power Supplies

D(2)(4)

S(3)

G(1)

Absolute Maximum Ratings

 Unless otherwise specified, T_A= 25 °C

Parameter

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current

Symbol

V_DS

Test conditions

Rating

Unit

V_GS

± 20

T_C= 25 °C

I_D

PW ≤ 100µs

Duty cycle ≤ 1 %

Pulsed Drain Current

I_DM

I_S

125

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

PW ≤ 100µs

Duty cycle ≤ 1 %

I_SM

125

V_DD= 38 V, L = 1 mH,

I_AS= 11.2 A, unclamped,

R_G= 4.7 Ω,

Single Pulse Avalanche Energy

E_AS

126

Refer to Figure 1

Avalanche Current

I_AS

P_D

23.3

116

150

T_C= 25 °C

Power Dissipation

°C

Operating Junction Temperature

Storage Temperature Range

T_J

T_STG

− 55 to 150

SKI07114-DS Rev.1.3

May. 23, 2014

SANKEN ELECTRIC CO.,LTD.

http://www.sanken-ele.co.jp

12 3 4 5 6 7 8

中文翻译

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