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SKHI10/17 PDF预览

SKHI10/17

更新时间: 2024-11-05 03:31:51
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动器MOSFET驱动器驱动程序和接口接口集成电路双极性晶体管
页数 文件大小 规格书
1页 74K
描述
High Power IGBT Driver

SKHI10/17 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.71
Is Samacsys:N内置保护:OVER CURRENT; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-XXMA-X
JESD-609代码:e3/e4功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
输出电流流向:SOURCE AND SINK封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大供电电压:15.6 V最小供电电压:14.4 V
标称供电电压:15 V表面贴装:NO
温度等级:OTHER端子面层:TIN/SILVER
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SKHI10/17 数据手册

  
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This technical information specifies semiconductor devices but promises no  
characteristics. No warranty or guarantee expressed or implied is made regarding  
delivery, performance or suitability.  
Typical Applications  
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1
18-08-2006 MHW  
© by SEMIKRON  

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