SKCD 120 C 120 I4FR
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.24 mA
VRRM
IFSM
1200
1280
1160
6728
175
V
A
A
A²s
°C
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 200 A 1)
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,
th(j-c) = 0.22 K/W,
R
IF(AV)
IR
152
A
VRRM = 1200 V
Size: 10 x 12 mm²
Semitrans Assembly
Tj = 25 °C, VRRM = 1200 V
Tj = 150 °C, VRRM = 1200 V
Tj = 25 °C, IF = 150 A
Tj = 150 °C, IF = 150 A
Tj = 175 °C, IF = 150 A
Tj = 150 °C
0.24
45.00
2.23
2.05
1.93
1.18
5.80
1.07
5.73
mA
mA
V
V
V
V
mΩ
V
VF
1.91
1.83
1.73
1.08
5.00
1.00
4.87
SKCD 120 C 120 I4FR
Features
ꢀ max. junction 175 °C
ꢀ very low forward voltage drop
ꢀ positive temperature coefficient
ꢀ extreme soft recovery
V(TO)
rT
V(TO)
rT
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
mΩ
Typical Applications*
ꢀ freewheeling diode for IGBT
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Footnotes
1) Nominal IGBT IF rating,
Tj = 25 °C, 225 A, 600 V, 4500 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
7.5
19.2
16
38
186
280
mJ
mJ
µC
µC
A
verified by design and characterization
Tj = 150 °C, 225 A, 600 V, 4500 A/µs
Tj = 25 °C, 225 A, 600 V, 4500 A/µs
Tj = 150 °C, 225 A, 600 V, 4500 A/µs
Tj = 25 °C, 225 A, 600 V, 4500 A/µs
Tj = 150 °C, 225 A, 600 V, 4500 A/µs
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
175
175
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
10 x 12
mm2
mm²
120
Anode
Cathode
Wire bond
Metallization
Metallization
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
Chips /
Package
150 mm wafer on frame
114
pcs
SKCD
© by SEMIKRON
Rev. 2.0 – 18.08.2016
1