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SKCD 120 C 120 I4F R PDF预览

SKCD 120 C 120 I4F R

更新时间: 2024-09-27 14:55:07
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SKCD 120 C 120 I4F R 数据手册

 浏览型号SKCD 120 C 120 I4F R的Datasheet PDF文件第2页 
SKCD 120 C 120 I4FR  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
Tj = 25 °C, IR = 0.24 mA  
VRRM  
IFSM  
1200  
1280  
1160  
6728  
175  
V
A
A
A²s  
°C  
Tj = 25 °C  
Tj = 150 °C  
10 ms  
sin 180°  
Tj = 150 °C, tp = 10 ms, sin 180°  
i²t  
Tjmax  
Electrical Characteristics  
Symbol Conditions  
CAL-DIODE  
min.  
typ.  
max.  
Unit  
IF = 200 A 1)  
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,  
th(j-c) = 0.22 K/W,  
R
IF(AV)  
IR  
152  
A
VRRM = 1200 V  
Size: 10 x 12 mm²  
Semitrans Assembly  
Tj = 25 °C, VRRM = 1200 V  
Tj = 150 °C, VRRM = 1200 V  
Tj = 25 °C, IF = 150 A  
Tj = 150 °C, IF = 150 A  
Tj = 175 °C, IF = 150 A  
Tj = 150 °C  
0.24  
45.00  
2.23  
2.05  
1.93  
1.18  
5.80  
1.07  
5.73  
mA  
mA  
V
V
V
V
m  
V
VF  
1.91  
1.83  
1.73  
1.08  
5.00  
1.00  
4.87  
SKCD 120 C 120 I4FR  
Features  
ꢀ max. junction 175 °C  
ꢀ very low forward voltage drop  
ꢀ positive temperature coefficient  
ꢀ extreme soft recovery  
V(TO)  
rT  
V(TO)  
rT  
Tj = 150 °C  
Tj = 175 °C  
Tj = 175 °C  
mΩ  
Typical Applications*  
ꢀ freewheeling diode for IGBT  
Dynamic Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Footnotes  
1) Nominal IGBT IF rating,  
Tj = 25 °C, 225 A, 600 V, 4500 A/µs  
Err  
Err  
Qrr  
Qrr  
Irrm  
Irrm  
7.5  
19.2  
16  
38  
186  
280  
mJ  
mJ  
µC  
µC  
A
verified by design and characterization  
Tj = 150 °C, 225 A, 600 V, 4500 A/µs  
Tj = 25 °C, 225 A, 600 V, 4500 A/µs  
Tj = 150 °C, 225 A, 600 V, 4500 A/µs  
Tj = 25 °C, 225 A, 600 V, 4500 A/µs  
Tj = 150 °C, 225 A, 600 V, 4500 A/µs  
A
Thermal Characteristics  
Symbol Conditions  
min.  
typ.  
max.  
Unit  
Tj  
Tstg  
Tsolder  
Tsolder  
-40  
-40  
175  
175  
250  
320  
°C  
°C  
°C  
°C  
10 min.  
5 min.  
Mechanical Characteristics  
Symbol Conditions  
Values  
Unit  
Raster  
size  
Area total  
10 x 12  
mm2  
mm²  
120  
Anode  
Cathode  
Wire bond  
Metallization  
Metallization  
bondable (Al)  
solderable (Ag/Ni)  
Al, typ. diameter = 300 µm  
Chips /  
Package  
150 mm wafer on frame  
114  
pcs  
SKCD  
© by SEMIKRON  
Rev. 2.0 – 18.08.2016  
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