SKCD 06 C 060 I3
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.05 mA
VRRM
IFSM
600
110
80
V
A
A
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
32
150
A²s
°C
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF(DC) = 15 A
Tc = 80 °C, Tj = 150 °C, Fi=PI/2,
th(j-c) = 2.46 K/W,
R
IF(AV)
IR
10
A
VRRM = 600 V
Semitrans Assembly
Tj = 25 °C, VRRM = 600 V
Tj = 125 °C, VRRM = 600 V
Tj = 25 °C, IF = 8 A
Tj = 125 °C, IF = 8 A
Tj = 125 °C
Size: 2.44 x 2.44 mm²
0.05
0.50
1.60
1.60
mA
mA
V
V
V
VF
1.35
1.35
0.90
55.0
SKCD 06 C 060 I3
V(TO)
rT
Features
Tj = 125 °C
mΩ
ꢀ low forward voltage drop combined
with a low temperature dependence
ꢀ easy paralleling due to a small forward
voltage spread
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
ꢀ very soft recovery behavior
ꢀ small switching losses
Tj = 25 °C, 15 A, 300 V, 220 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
0.06
0.1
0.5
1
4
6
mJ
mJ
µC
µC
A
ꢀ high ruggedness
Tj = 125 °C, 15 A, 300 V, 220 A/µs
Tj = 25 °C, 15 A, 300 V, 220 A/µs
Tj = 125 °C, 15 A, 300 V, 220 A/µs
Tj = 25 °C, 15 A, 300 V, 220 A/µs
Tj = 125 °C, 15 A, 300 V, 220 A/µs
ꢀ compatible to thick wire bonding
ꢀ compatible to all standard solder
processes
Typical Applications*
ꢀ freewheeling diode for IGBT
A
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
150
150
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
2.44 x 2.44
mm2
mm²
5.95
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
150 mm wafer on frame
Chips /
Package
2588
pcs
SKCD
© by SEMIKRON
Rev. 0 – 23.01.2014
1