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SKB15N60HS PDF预览

SKB15N60HS

更新时间: 2024-09-18 03:31:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管电动机控制双极性晶体管
页数 文件大小 规格书
14页 348K
描述
High Speed IGBT in NPT-technology

SKB15N60HS 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):27 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):138 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):252 ns标称接通时间 (ton):27 ns
Base Number Matches:1

SKB15N60HS 数据手册

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SKB15N60HS  
^
High Speed IGBT in NPT-technology  
30% lower Eoff compared to previous generation  
Short circuit withstand time – 10 µs  
C
G
E
Designed for operation above 30 kHz  
NPT-Technology for 600V applications offers:  
- parallel switching capability  
P-TO-220-3-45  
- moderate Eoff increase with temperature  
- very tight parameter distribution  
High ruggedness, temperature stable behaviour  
Pb-free lead plating; RoHS compliant  
Qualified according to JEDEC1 for target applications  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
Tj  
Marking  
Package  
Eoff  
K15N60HS  
SKB15N60HS  
Maximum Ratings  
Parameter  
600V  
15A  
200µJ  
P-TO-220-3-45  
150°C  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
600  
V
A
27  
15  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpul s  
-
60  
60  
VCE 600V, Tj 150°C  
Diode forward current  
TC = 25°C  
IF  
40  
20  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Gate-emitter voltage static  
IFpul s  
VG E  
80  
±20  
±30  
V
transient (tp<1µs, D<0.05)  
Short circuit withstand time2)  
tSC  
10  
µs  
W
VGE = 15V, VCC 400V, Tj 150°C  
Power dissipation  
Pt ot  
138  
TC = 25°C  
Operating junction and storage temperature  
Tj ,  
-55...+150  
°C  
Tstg  
Time limited operating junction temperature for t < 150h  
Soldering temperature (reflow soldering, MSL1)  
Tj(tl)  
-
175  
220  
1 J-STD-020 and JESD-022  
2) Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev 2.2 June 06  
Power Semiconductors  

SKB15N60HS 替代型号

型号 品牌 替代类型 描述 数据表
IGB20N60H3 INFINEON

完全替代

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PL
IRG4PC50WPBF INFINEON

类似代替

INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UDPBF INFINEON

类似代替

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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