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SKB02N60_07 PDF预览

SKB02N60_07

更新时间: 2024-09-18 06:11:51
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管双极性晶体管
页数 文件大小 规格书
13页 1150K
描述
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKB02N60_07 数据手册

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SKB02N60  
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode  
C
75% lower Eoff compared to previous generation  
combined with low conduction losses  
Short circuit withstand time – 10 µs  
G
E
Designed for frequency inverters for washing machines,  
fans, pumps and vacuum cleaners  
NPT-Technology for 600V applications offers:  
- very tight parameter distribution  
- high ruggedness, temperature stable behaviour  
- parallel switching capability  
PG-TO-263-3-2  
Very soft, fast recovery anti-parallel EmCon diode  
Pb-free lead plating; RoHS compliant  
Qualified according to JEDEC1 for target applications  
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/  
Type  
VCE  
IC  
VCE(sat)  
Tj  
Marking  
Package  
SKB02N60  
600V  
2A  
2.2V  
K06N60 PG-TO-263-3-2  
150°C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
DC collector current  
TC = 25°C  
VCE  
IC  
600  
V
A
6.0  
2.9  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax  
Turn off safe operating area  
ICpul s  
-
12  
12  
VCE 600V, Tj 150°C  
Diode forward current  
TC = 25°C  
IF  
6.0  
2.9  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax  
Gate-emitter voltage  
Short circuit withstand time2  
IFpul s  
VG E  
tSC  
12  
±20  
10  
V
µs  
VGE = 15V, VCC 600V, Tj 150°C  
Power dissipation  
Pt ot  
30  
W
TC = 25°C  
Operating junction and storage temperature  
Soldering temperature (reflow soldering, MSL1)  
Tj , Tstg  
Ts  
-55...+150  
245  
°C  
°C  
1 J-STD-020 and JESD-022  
2 Allowed number of short circuits: <1000; time between short circuits: >1s.  
1
Rev. 2.2 Oct. 07  

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