型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKB02N60ATMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPL | |
SKB02N60E3266 | INFINEON |
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLA | |
SKB04N60 | INFINEON |
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |
SKB04N60_07 | INFINEON |
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |
SKB04N60ATMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COM | |
SKB04N60-E-3045A | INFINEON |
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Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, P | |
SKB04N60XT | INFINEON |
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暂无描述 | |
SKB06N60 | INFINEON |
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Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |
SKB06N60ATMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMP | |
SKB06N60HS | INFINEON |
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High Speed IGBT in NPT-technology |