型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SK8BGDL063 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, BGDL, CASE T 44, SE | |
SK8D | WEEN |
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Standard recovery power diode in a TO252 (DPAK) surface-mountable plastic package. | |
SK8DGDL063 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, CASE T43, SEMITOP-1 | |
SK8DGDL065ET | SEMIKRON |
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3-phase bridge rectifier + brake chopper +3-phase bridge inverter | |
SK8DGDL065ET_08 | SEMIKRON |
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3-phase bridge rectifier + brake chopper +3-phase bridge inverter | |
SK8FORTL.ZAHLEN-0804183 | PHOENIX |
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Plug component, Nominal current: 12 A, Rated voltage (III/2): 320 V, Number of positions: | |
SK8GD062 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, CASE T12, 11 PIN | |
SK8GD126 | SEMIKRON |
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IGBT Module | |
SK8GD126_06 | SEMIKRON |
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IGBT Module | |
SK8GD126_07 | SEMIKRON |
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IGBT Module |