是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-P16 |
针数: | 16 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 600 V |
配置: | COMPLEX | JESD-30 代码: | R-PUFM-P16 |
JESD-609代码: | e2 | 元件数量: | 6 |
端子数量: | 16 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
参考标准: | IEC-60747-1 | 表面贴装: | NO |
端子面层: | Tin/Silver (Sn/Ag) | 端子形式: | PIN/PEG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 170 ns | 标称接通时间 (ton): | 45 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SK8BGD065E_06 | SEMIKRON |
获取价格 |
1-phase bridge rectifier +3-phase bridge inverter | |
SK8BGD065E_08 | SEMIKRON |
获取价格 |
1-phase bridge rectifier +3-phase bridge inverter | |
SK8BGD065ET | SEMIKRON |
获取价格 |
暂无描述 | |
SK8BGDL063 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, BGDL, CASE T 44, SE | |
SK8D | WEEN |
获取价格 |
Standard recovery power diode in a TO252 (DPAK) surface-mountable plastic package. | |
SK8DGDL063 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, CASE T43, SEMITOP-1 | |
SK8DGDL065ET | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper +3-phase bridge inverter | |
SK8DGDL065ET_08 | SEMIKRON |
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3-phase bridge rectifier + brake chopper +3-phase bridge inverter | |
SK8FORTL.ZAHLEN-0804183 | PHOENIX |
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Plug component, Nominal current: 12 A, Rated voltage (III/2): 320 V, Number of positions: | |
SK8GD062 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, CASE T12, 11 PIN |