Datasheet > SK8603160L

SK8603160L

更新时间： 2024-09-29 01:25:11

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Silicon N-channel MOS FET

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SK8603160L 数据手册

Doc No. TT4-EA-14462

Revision. 3

Product Standards

MOS FET

SK8603160L

Silicon N-channel MOS FET

Unit : mm

5.1

4.9

For Load-switching / For DC-DC Converter

0.22

 Features



Low Drain-source On-state Resistance : RDS(on) typ = 3.3 m (VGS = 4.5 V)

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)

0.4

1.0

 Marking Symbol :

 Packaging

1.27

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

1. Source

2. Source

3. Source

4. Gate

5. Drain

6. Drain

7. Drain

8. Drain

 Absolute Maximum Ratings Ta = 25 C

Panasonic

JEITA

HSO8-F4-B

SC-111BC

—

Parameter

Drain to Source Voltage

Gate to Source Voltage

Symbol

VDS

Rating

20

102

2.8

Unit

Code

VGS

Ta = 25 C, t = 10 s ^*1

Ta = 25 C, DC ^*1

Tc = 25 C

Internal Connection

Drain Current

Pulsed, Tch < 150 C ^*2

Ta = 25 C, DC ^*1

Tc = 25 C

Total Power

Dissipation

Channel to Ambient Rth(ch-a)

4.5

150

Thermal Resistance

C / W

Channel to Case

Rth(ch-c)

Tch

Channel Temperature

Operating ambient temperature

Storage Temperature Range

Avalanche Current (Single pulse)

Avalanche Energy (Single pulse)

Topr

Tstg

IAR

-40 to +85

-55 to +150

C

Pin Name

EAR

Note *1 Device mounted on a glass-epoxy board in Figure 1

1. Source

2. Source

3. Source

4. Gate

5. Drain

6. Drain

7. Drain

8. Drain

Pulse test: Ensure that the channel temperature does not exceed 150 C

VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial)

Figure 1 FR4 Glass-Epoxy Board

25.4 mm × 25.4 mm × 0.8 mm

Page 1 of 6

Established : 2012-12-10

Revised : 2013-05-31

12 3 4 5 6 7

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