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SK8603150L PDF预览

SK8603150L

更新时间: 2024-09-29 01:25:11
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松下 - PANASONIC /
页数 文件大小 规格书
7页 355K
描述
Silicon N-channel MOS FET

SK8603150L 数据手册

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Doc No. TT4-EA-14213  
Revision. 3  
MOS FET  
SK8603150L  
SK8603150L  
Silicon N-channel MOS FET  
Unit : mm  
5.1  
4.9  
7
For Load-switching / For DC-DC Converter  
0.22  
8
6
5
Features  
Low Drain-source On-state Resistance : RDS(on) typ = 2.5 m(VGS = 4.5 V)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)  
1
2
3
4
0.4  
1.0  
Marking Symbol :  
Packaging  
15  
1.27  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Source  
2. Source  
3. Source  
4. Gate  
5. Drain  
6. Drain  
7. Drain  
8. Drain  
Absolute Maximum Ratings Ta = 25 C  
Panasonic  
JEITA  
HSO8-F4-B  
SC-111BC  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Symbol  
VDS  
Rating  
30  
20  
40  
26  
89  
120  
2.9  
Unit  
V
Code  
VGS  
Ta = 25 C, t = 10 s *1  
Ta = 25 C, DC *1  
Tc = 25 C  
Internal Connection  
Drain Current  
ID  
A
8
7
6
5
Pulsed, Tch < 150 C *2  
Ta = 25 C, DC *1  
Tc = 25 C  
Total Power  
Dissipation  
PD  
W
34  
Channel to Ambient Rth(ch-a)  
42  
3.7  
150  
Thermal Resistance  
C / W  
Channel to Case  
Rth(ch-c)  
Tch  
Channel Temperature  
Operating ambient temperature  
Storage Temperature Range  
Avalanche Current (Single pulse)  
Avalanche Energy (Single pulse)  
Topr  
Tstg  
IAR  
-40 to +85  
-55 to +150  
20  
C  
1
2
3
4
*3  
*3  
A
mJ  
Pin Name  
EAR  
46  
Note *1 Device mounted on a glass-epoxy board in Figure 1  
1. Source  
2. Source  
3. Source  
4. Gate  
5. Drain  
6. Drain  
7. Drain  
8. Drain  
*2  
*3  
Pulse test: Ensure that the channel temperature does not exceed 150 C  
VDD = 24 V, VGS = 10 to 0 V, L = 0.1 mH, Tch = 25 C (initial)  
Figure 1 FR4 Glass-Epoxy Board  
25.4 mm × 25.4 mm × 0.8 mm  
Page 1 of 6  
Established : 2012-09-19  
Revised : 2013-05-31  

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