Datasheet > SK83

SK83

更新时间： 2024-11-17 14:52:35

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描述
SMD

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中文翻译

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数据手册

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SK83 数据手册

SK82 – S810

8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

WON-TOP ELECTRONICS

Features



Low Forward Voltage



Epitaxial Construction with Oxide Passivation

Guard Ring for Transient and ESD Protection

Surge Overload Rating to 150A Peak

Low Power Loss

Fast Switching

Ideally Suited for Use in High Frequency

SMPS, Inverters and As Free Wheeling Diodes

SMC/DO-214AB

Min

Mechanical Data

Dim

Max

6.22

7.11



Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

5.59

6.60

2.75

3.25

0.305

8.13

2.62

0.203

1.52



Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

0.152

7.75

2.00

0.051

0.76

All Dimensions in mm

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

SK82 SK83 SK84 SK85 SK86 SK88 SK89 S810

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current (Note 1)

8.0

150

0.75

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 8.0A

VFM

IRM

0.55

450

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.5

Typical Junction Capacitance (Note 2)

350

Thermal Resistance, Junction to Ambient (Note 1)

Thermal Resistance, Junction to Lead (Note 1)

RθJA

RθJC

°C/W

Operating Temperature Range

Storage Temperature Range

-55 to +125

-55 to +150

°C

TSTG

-55 to +150

Note: 1. Mounted on FR-4 PCB with 14 x 14mm copper pads.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Revision: September, 2019

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