Datasheet > SK75MLI07S5TD1E1

SK75MLI07S5TD1E1

更新时间： 2024-09-30 14:53:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
10页	1198K
描述
IGBT Modules SEMITOP E1 (63x34x12)

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中文翻译

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数据手册

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SK75MLI07S5TD1E1 数据手册

SK75MLI07S5TD1E1

Absolute Maximum Ratings

Symbol Conditions

IGBT1

Values

Unit

T_j= 25 °C

V_CES

650

150

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

I_C

λ_paste=0.8 W/(mK)

T_j= 175 °C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1

3-Level NPC

V_CC= 360 V, V_GE≤ 15 V, T_j= 150 °C,

_CES≤ 650 V

t_psc

T_j

not capable

-40 ... 175

µs

°C

IGBT2

V_CES

I_C

SK75MLI07S5TD1E1

Features*

T_j= 25 °C

650

102

128

101

150

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

• Optimized design for superior thermal

performance

I_Cnom

I_CRM

V_GES

• Low inductive design

• Press-Fit contact technology

• 650V Trench5 IGBT (S5/L5)

• Rapid switching diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

V_CC= 360 V, V_GE≤ 15 V, T_j= 150 °C,

_CES≤ 650 V

t_psc

not capable

-40 ... 175

µs

°C

T_j

Typical Applications

• UPS

• Solar

Diode1

V_RRM

I_F

T_j= 25 °C

650

°C

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Remarks*

• Recommended T_j,op=-40 ...+150 °C

• IGBT1: outer IGBTs T1 & T4

• IGBT2: inner IGBTs T2 & T3

• Diode1: outer Diodes D1 & D4

• Diode2: inner Diodes D2 & D3

• Diode5: clamping Diodes D5 & D6

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

100

300

10 ms, sin 180°, T_j= 25 °C

-40 ... 175

Diode2

V_RRM

I_F

Footnotes

T_j= 25 °C

650

¹⁾Please find further technical information

on the SEMIKRON website.

T_s= 25 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_FRM

I_FSM

T_j

100

350

-40 ... 175

°C

10 ms, sin 180°, T_j= 25 °C

MLI-T

Rev. 1.0 – 30.01.2021

12 3 4 5 6 7...10

中文翻译

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