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SK58GLP PDF预览

SK58GLP

更新时间: 2024-11-25 20:52:23
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 501K
描述
DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AB, SMCG, 2 PIN, Rectifier Diode

SK58GLP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AB
包装说明:SMCG, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.63
Base Number Matches:1

SK58GLP 数据手册

 浏览型号SK58GLP的Datasheet PDF文件第2页浏览型号SK58GLP的Datasheet PDF文件第3页 
M C C  
SK52GL  
THRU  
SK510GL  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
5 Amp Schottky  
Rectifier  
20 to 100 Volts  
·
·
·
·
High Current Capability  
For Surface Mount Applications  
High Temp Soldering: 250°C for 10 Seconds At Terminals  
Available on Tape and Reel  
DO-214AB  
(SMCG) (Lead Frame)  
Maximum Ratings  
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
H
Cathode Band  
MCC  
Part  
Number  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
60V  
80V  
100V  
Device  
Marking  
J
SK52GL  
SK53GL  
SK54GL  
SK56GL  
SK58GL  
SK52GL  
SK53GL  
SK54GL  
SK56GL  
SK58GL  
20V  
14V  
21V  
28V  
42V  
56V  
70V  
30V  
40V  
60V  
80V  
100V  
A
C
E
D
B
SK510GL SK510GL  
G
Electrical Characteristics @ 25OC Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
5.0A  
T = 120OC  
J
INCHES  
MIN  
MM  
MIN  
DIM  
A
B
C
D
E
G
H
J
MAX  
.095  
.121  
.008  
.02  
MAX  
2.41  
3.07  
.20  
.51  
1.01  
NOTE  
.075  
.115  
.004  
---  
1.91  
2.92  
.10  
---  
Peak Forward Surge  
Current  
IFSM  
100A  
8.3ms, half sine  
.025  
.04  
.64  
Maximum  
.380  
.260  
.220  
.400  
.280  
.245  
9.65  
6.60  
5.59  
10.1  
7.11  
6.22  
Instantaneous  
Forward Voltage  
SK52GL-54GL  
SK56GL  
SK58GL-510GL  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
.55V  
.75V  
.85V  
IFM = 5.0A;  
J
SUGGESTED SOLDER  
PAD LAYOUT  
T = 25OC  
0.190  
IR  
1.0mA T = 25OC  
J
20mA  
T = 100OC  
J
0.125”  
Typical Junction  
Capacitance  
CJ  
200pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 200 usec, Duty cycle 2%  
0.070”  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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