SK52BF - SK510BF
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 5.0 A
Features
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
For Use in Low Voltage Application
Guard Ring Die Construction
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B
Plastic Case Material has UL Flammability
C
E
Mechanical Data
SMBF
Dim Min Max Typ
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Case:SMBF , Molded Plastic
A
B
C
D
E
H
L
5.45 5.55 5.50
4.27 4.33 4.30
3.57 3.63 3.60
1.32 1.38 1.35
1.96 2.00 1.98
D
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
H
L
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0.021 0.20
0.019
0.73 0.77 0.75
All Dimensions in mm
E
Weight: 0.0018 ounces,0.05grams
A
Maximum Ratings and Electrical Characteristics T = 25ꢀC unless otherwise specified
A
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SK52BF SK53BF SK54BF SK55BF SK56BF SK58BF SK510BF Unit
Symbol
Characteristic
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
V
RRM
RMS
V
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
V
DC
I
(AV)
5.0
A
Peak forward surge current
A
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
V
F
0.55
0.70
0.85
Maximum instantaneous forward voltage at 5.0A
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
I
R
TA=100 C
20
10
200
pF
C/W
C
Typical junction capacitance (NOTE 1)
C
J
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
50.0
-65 to +125
-65 to +150
-65 to +150
T ,
J
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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