Datasheet > SK3200AF

SK3200AF

更新时间： 2023-12-06 20:10:23

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	132K
描述
Rectifier device Schottky Diode

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数据手册

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SK3200AF 数据手册

SK3150AF - SK3200AF

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 150-200V

CURRENT: 3.0 A

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

SMAF

Dim Min Max Typ

Mechanical Data

4.75 4.85

3.68 3.72

4.80

3.70

2.60

1.00

Case: SMAF,Molded Plastic

2.57

2.63

Terminals: Solder Plated, Solderable

0.097 1.03

per MIL-STD-750, Method 2026

Polarity:Color band denotes cathode end

Mounting Position:Any

1.38 1.42 1.40

0.13 0.17 0.15

0.63 0.67 0.65

All Dimensions in mm

Weight:0.0018 ounce, 0.064 grams

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

SK3200AF

Unit

SK3150AF

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

105

150

200

140

200

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

3.0

Amps

IFSM

80.0

0.95

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Maximum instantaneous forward voltage at 3.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

0.2

2.0

TA=100 C

Typical junction capacitance (NOTE 1)

C/W

160

40.0

-65 to +150

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RθJA

TJ,

Storage temperature range

TSTG

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

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