是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X7 |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 30 A |
配置: | COMPLEX | 最小直流电流增益 (hFE): | 100 |
最大降落时间(tf): | 3000 ns | JESD-30 代码: | R-PUFM-X7 |
JESD-609代码: | e2 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 功耗环境最大值: | 620 W |
最大功率耗散 (Abs): | 310 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Silver (Sn/Ag) | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 18000 ns | 最大开启时间(吨): | 2500 ns |
VCEsat-Max: | 2.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SK30DB120D | SEMIKRON |
获取价格 |
Power Bipolar Transistor, 30A I(C), 2-Element, NPN, Silicon, Plastic/Epoxy, 7 Pin, | |
SK30DGDL066ET | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SK30DGDL066ET_09 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SK30DGDL07E3ETE1 | SEMIKRON |
获取价格 |
IGBT Modules SEMITOP E1 (63x34x12) | |
SK30DTA | SEMIKRON |
获取价格 |
3-phase bridge rectifier+ series thyristor | |
SK30DTA_08 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + series thyristor | |
SK30E1000UH | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR, RADIAL LEADED | |
SK30E100MB25 | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 7 uH, GENERAL PURPOSE INDUCTOR | |
SK30E100UH | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, RADIAL LEADED | |
SK30E101MB25 | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 70 uH, GENERAL PURPOSE INDUCTOR |