Datasheet > SK280MB10

SK280MB10

更新时间： 2024-01-31 15:02:16

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
6页	591K
描述
MOSFET Modules SEMITOP 3 (55x31x12)

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中文翻译

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SK280MB10 数据手册

SK280MB10

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

MOSFET 1

V_DSS

I_D

100

335

280

T_s= 25 °C

T_s= 70 °C

T_j= 175 °C

I_DM

I_DRM

V_GS

T_j

960

320

-20 ... 20

-40 ... 175

°C

SEMITOP^®3

Integrated body diode

I_FM

I_FRM

960

320

Half-Bridge (MOSFET

module)

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

SK280MB10

Features*

• One screw mounting module

• Low inductive design

∆T_terminalat PCB joint = 30 K, per pin

I_t(RMS)

T_stg

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

• Heat transfer and isolation through

direct copper bonded aluminium oxide

ceramic (DCB)

Characteristics

Symbol Conditions

MOSFET 1

min.

typ.

max.

Unit

• 100V Trench MOS technology

• UL recognized file no. E 63 532

V_GS= 0 V, I_D= 1 mA, T_j= 25 °C

V_(BR)DSS

V_GS(th)

I_DSS

100

mΩ

Typical Applications

• Switched Mode Power Supplies

V_DS= V_GS, I_D= 0.55 mA, T_j= 25 °C

V_GS= 0 V, V_DS= 100 V, T_j= 25 °C

V_DS= 0 V, V_GS= 20 V, T_j= 25 °C

2.7

3.5

0.2

200

1.35

I_GSS

Remarks

Recommended driving for optimal

switching performances: V_GS=0/10V

V_GS= 10 V

_D= 200 A

chiplevel

T_j= 25 °C

R_DS(on)

1.15

2.1

T_j= 150 °C

mΩ

V_GS= 0 V, V_DS= 50 V, f = 1 MHz

T_j= 25 °C

C_iss

C_oss

C_rss

R_Gint

Q_G

t_d(on)

t_d(off)

t_r

22200

3880

138

530

190

1000

133

V_GS= 0…+15 V, V_DD= 50 V, I_D= 200 A

T_j= 150 °C

V_DD= 50 V

_GS= 15/0 V

_D= 200 A

_{G on/off}= 15 Ω

T_j= 150 °C

t_f

di/dt_off= 1.6 kA/µs

di/dt_on= 1.4 kA/µs

dv/dt = 637 kV/µs

E_on

E_off

R_th(j-s)

0.2

2.1

0.47

K/W

per MOSFET, λ_paste=0.8 W/(mK)

Integrated body diode

-I_D= 200 A

T_j= 25 °C

V_F= V_SD

0.88

0.77

_GS= 0 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0= V_SD0

r_F= r_SD

0.71

0.53

0.85

1.20

2.7

0.1

mΩ

µC

chiplevel

t_rr

Q_rr

I_rr

V_DD= 50 V

-I_D= 200 A

di/dt_off= 1.4 kA/µs

_GS= 0 V

E_rr

Rev. 1.0 – 24.09.2020

12 3 4 5 6

中文翻译

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