Datasheet > SK25DGDL12T4ETE2V1

SK25DGDL12T4ETE2V1

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
10页	897K
描述
IGBT Modules SEMITOP E2 (63x57x12)

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中文翻译

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数据手册

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SK25DGDL12T4ETE2V1 数据手册

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SK25DGDL12T4ETE2V1

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E2

I_CRM= 3 x I_Cnom

V_CC= 800 V

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

t_psc

T_j

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

µs

°C

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

IGBT 2

SK25DGDL12T4ETE2V1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

Features*

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trench4 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3 x I_Cnom

V_CC= 800 V

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

T_j

µs

°C

-40 ... 175

Typical Applications

Absolute Maximum Ratings

Symbol Conditions

Diode 1

• Motor drives

• Air conditioning

• Auxiliary Inverters

Values

Unit

T_j= 25 °C

V_RRM

I_F

1600

270

364

A²s

°C

Remarks

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

λ_paste=0.8 W/(mK)

T_j= 150 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 150 °C

I_Fnom

I_FSM

i²t

10 ms, sin 180°, T_j= 150 °C

T_j

-40 ... 150

DGDL-ET

Rev. 1.0 – 23.01.2020

12 3 4 5 6 7...10

中文翻译

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与SK25DGDL12T4ETE2V1相关器件

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